Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene (TESADT) organic transistors?

R. Lyttleton, K. Muhieddine, J. Anthony, A. Micolich
{"title":"Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene (TESADT) organic transistors?","authors":"R. Lyttleton, K. Muhieddine, J. Anthony, A. Micolich","doi":"10.1109/COMMAD.2012.6472426","DOIUrl":null,"url":null,"abstract":"Solvent annealing is a wellknown method for crystallization of the TESADT semiconductor film in organic transistors. We show that although thermal annealing is also effective in producing crystallization, it compromises the resulting electrical performance.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"COMMAD 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2012.6472426","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Solvent annealing is a wellknown method for crystallization of the TESADT semiconductor film in organic transistors. We show that although thermal annealing is also effective in producing crystallization, it compromises the resulting electrical performance.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
热退火是三乙基硅乙基反辐射噻吩(TESADT)有机晶体管结晶的可行替代方法吗?
溶剂退火法是制备有机晶体管中TESADT半导体薄膜的常用方法。我们表明,虽然热退火在产生结晶方面也是有效的,但它会损害所得的电性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Quantum integrated photonics on GaAs Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor A metamaterial antenna approach to near infra-red polarisation state control Non-linear direct-laser-write lithography for semiconductor nanowire characterisation Effect of plasmonic nanoparticles on the quantum efficiency of III–V semiconductor nanowire emitters
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1