Advantages of K-Power Plot for Experimental IVC Processing

Abstract

A universal formula that describes the functional dependence of the emission area on the applied voltage, taking into account the shape of the emitter tip is proposed. The advantage of using the new semi-logarithmic coordinates ${}^{\prime\prime}\mathrm{k}$ -power plot” for the current-voltage characteristic (IVC) processing is shown. The processing of local IVCs obtained by the method of post-processing of the emission patterns of a large-area nanocomposite emitter has been processed. The diagram “apex radius / effective height” for local emission sites has been obtained. A shift in the effective height of individual emission centers with a reduced current load, which is associated with an increase in their work function, has been found.