Integration and optimisation of a high performance RF lateral DMOS in an advanced BiCMOS technology

B. Szelag, H. Baudry, D. Muller, A. Giry, D. Lenoble, B. Reynard, D. Pache, A. Monroy
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引用次数: 13

Abstract

In this paper, we present the optimisation of a RF lateral DMOS and its integration in an advanced 0.25 /spl mu/m SiGe:C BiCMOS technology. The proposed device shows excellent characteristics; Ron is around 2.5 /spl Omega/.mm with a BVDS larger than 13 V, f/sub T/ and F/sub max/ reach 21 GHz and 40 GHz respectively. These performances fit wireless RF-power amplifier needs. Integration of such a device in a RF oriented BiCMOS process is a key issue for a SOC approach of wireless circuits.
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在先进的BiCMOS技术中集成和优化高性能射频横向DMOS
在本文中,我们提出了射频横向DMOS的优化及其集成在先进的0.25 /spl mu/m SiGe:C BiCMOS技术中。该装置具有优异的性能;罗恩大约是2.5 /spl / Omega/。当BVDS大于13v时,f/sub T/和f/sub max/分别达到21 GHz和40 GHz。这些性能符合无线射频功率放大器的需求。在面向射频的BiCMOS工艺中集成这样的器件是无线电路SOC方法的关键问题。
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