J. Nakata, T. Sogo, K. Yamanaka, Y. Mihashi, K. Shirahata
{"title":"Temperature-sensitive switching device thermosenstor","authors":"J. Nakata, T. Sogo, K. Yamanaka, Y. Mihashi, K. Shirahata","doi":"10.1109/IEDM.1977.189294","DOIUrl":null,"url":null,"abstract":"A p-n-p-n temperature-sensitive switching device \"Thermosenstor\" operatable in the temperature range of -30°C to 150°C has been developed by implanting argon ion to the collector junction of the p-n-p-n structure. Argon ion implantation also permits the device to be less sensitive to the dV/dt triggering as well as to eliminate the on-off switching temperature differential. The construction, characteristics and reliability are described.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"62 10","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189294","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A p-n-p-n temperature-sensitive switching device "Thermosenstor" operatable in the temperature range of -30°C to 150°C has been developed by implanting argon ion to the collector junction of the p-n-p-n structure. Argon ion implantation also permits the device to be less sensitive to the dV/dt triggering as well as to eliminate the on-off switching temperature differential. The construction, characteristics and reliability are described.
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