H.P. Yee, P. Lauritzen, R. Darling, M. Wakatabe, A. Sugai, K. Horiguchi
{"title":"The fast turn off advanced IGBT, a new device concept","authors":"H.P. Yee, P. Lauritzen, R. Darling, M. Wakatabe, A. Sugai, K. Horiguchi","doi":"10.1109/ISPSD.1994.583648","DOIUrl":null,"url":null,"abstract":"A new lateral Advanced IGBT (A-IGBT) that includes an additional P-MOSFET for faster turn-off is presented. The added P-MOSFET removes injected minority carriers in the base of A-IGBT during turn-off, achieving faster turn-off times without increasing IGBT on-state voltages. Device simulations indicate an A-IGBT has a factor of 10 improvement in turn-off time over the standard IGBT.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583648","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
A new lateral Advanced IGBT (A-IGBT) that includes an additional P-MOSFET for faster turn-off is presented. The added P-MOSFET removes injected minority carriers in the base of A-IGBT during turn-off, achieving faster turn-off times without increasing IGBT on-state voltages. Device simulations indicate an A-IGBT has a factor of 10 improvement in turn-off time over the standard IGBT.