A 5.4GHz 0.65dB NF 6dBm IIP3 MGTR LNA in 130nm SOI CMOS

Abstract

Using a multiple gated transistor core (MGTR) with different channel lengths, a 5.4GHz LNA in 130nm SOI CMOS is demonstrated. Using a 1V supply and consuming 3mA current, LNA has 10.8dB gain, 0.65dB NF, 6dBm IIP3. The LNA is matched at input and output from 5-6GHz using high Q on-chip inductors in high resistive substrate. The LNA achieves state-of-the-art NF compared to LNAs employing MGTR and other linearization techniques, as well as the highest figure of merits, FOM2 & FOM3 in published LNAs.