Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe

Abstract

Electron transport in n-type HgCdTe realised by Boron ion-implantation and inductively-coupled-plasma reactive-ion etching (ICP-RIE) of vacancy doped p-type HgCdTe has been investigated by employing variable magnetic field Hall-effect and resistivity measurements, coupled with high resolution mobility spectrum analysis (HR-MSA). Electron mobilities were found to be significantly higher in the ICP-RIE type-converted sample than in the ion-implanted sample, suggesting that type-conversion mechanisms in the two samples are significantly different.