Gold-free Cu-metallized III-V solar cell

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI:10.1109/SMELEC.2014.6920866

Ching-Hsiang Hsu, Hsun-Jui Chang, H. Yu, Hong-Quan Nguyen, J. Ma, E. Chang

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引用次数: 2

Abstract

Au-free, fully Cu-metallized InGaP/InGaAs/Ge triple-junction solar cells using Pd/Ge/Cu as front contact and Pt/Ti/Pt/Cu/Cr as back contact were fabricated and the results are reported for the first time. From the specific contact resistance measurement, these Cu-metallized ohmic contacts have low contact resistance in the order of 10-6 Ω-cm2. AES and TEM results clearly show the formation mechanisms of the Cu-metallization ohmic structures, for Pd/Ge/Cu contact, it was due to the formation of Ge diffusion into the GaAs layer, and for the Pt/Ti/Pt/Cu/Cr contact, it was due to high work function of Pt layer, these copper metallized ohmic contacts were quite stable even after 310 °C annealing. The I-V curves of the Cu-metallized InGaP/InGaAs/Ge triple-junction solar cells showed similar electrical characteristics to the solar cells with Au-metallized triple junction solar cell. Overall, the Pd/Ge/Cu and Pt/Ti/Pt/Cu ohmic contacts have been successfully applied to the InGaP/InGaAs/Ge triple-junction solar cells and demonstrated excellent performance.

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无金铜金属化III-V型太阳能电池

制备了以Pd/Ge/Cu为前触点，Pt/Ti/Pt/Cu/Cr为后触点的无au、全Cu金属化InGaP/InGaAs/Ge三结太阳能电池。从具体接触电阻测量来看，这些金属化铜欧姆触点的接触电阻较低，约为10-6 Ω-cm2。AES和TEM结果清楚地显示了铜金属化欧姆结构的形成机制，对于Pd/Ge/Cu触点，这是由于Ge扩散到GaAs层中形成的，对于Pt/Ti/Pt/Cu/Cr触点，这是由于Pt层的高功函数，这些铜金属化欧姆触点即使经过310℃退火也相当稳定。cu金属化InGaP/InGaAs/Ge三结太阳电池的I-V曲线与au金属化三结太阳电池的电特性相似。总体而言，Pd/Ge/Cu和Pt/Ti/Pt/Cu欧姆触点已成功应用于InGaP/InGaAs/Ge三结太阳能电池，并表现出优异的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)

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