M. Harada, T. Minato, H. Takahashi, H. Nishihara, K. Inoue, I. Takata
{"title":"600 V trench IGBT in comparison with planar IGBT-an evaluation of the limit of IGBT performance","authors":"M. Harada, T. Minato, H. Takahashi, H. Nishihara, K. Inoue, I. Takata","doi":"10.1109/ISPSD.1994.583811","DOIUrl":null,"url":null,"abstract":"We have developed a large area trench MOS process and experimentally manufactured a 600 V, 50 A class trench IGBT. By narrowing the trench pitch, the devices achieved a superior ON state voltage(V/sub CE/(sat)=1.4 V, t/sub f/=230 ns @ 200 A/cm/sup 2/) and much better endurance property (dI/sub c//dt/spl ap/2500 A/(s/spl middot/cm/sup 2/)) for latch-up than planar IGBTs. Trench IGBTs also showed a higher breakdown voltage(BV/sub CES/) than planar IGBTs. We have confirmed that the trench IGBT realizes the ideal structure, \"PIN diode+MOS gate\", which was proposed at the start of the IGBT development. The trench IGBT would be expected to be a superior high voltage device, especially due to its endurance property for latch-up operation.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"44","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583811","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 44
Abstract
We have developed a large area trench MOS process and experimentally manufactured a 600 V, 50 A class trench IGBT. By narrowing the trench pitch, the devices achieved a superior ON state voltage(V/sub CE/(sat)=1.4 V, t/sub f/=230 ns @ 200 A/cm/sup 2/) and much better endurance property (dI/sub c//dt/spl ap/2500 A/(s/spl middot/cm/sup 2/)) for latch-up than planar IGBTs. Trench IGBTs also showed a higher breakdown voltage(BV/sub CES/) than planar IGBTs. We have confirmed that the trench IGBT realizes the ideal structure, "PIN diode+MOS gate", which was proposed at the start of the IGBT development. The trench IGBT would be expected to be a superior high voltage device, especially due to its endurance property for latch-up operation.