{"title":"An integrated dual-band SiGe HBT low noise amplifier","authors":"Chengyu Huang, Y. Hsin","doi":"10.1109/RFIT.2005.1598907","DOIUrl":null,"url":null,"abstract":"A common-base cascade dual-band low noise amplifier (LNA) for 2.4 and 5.8 GHz is presented in this paper. The LNA design is based on SiGe HBT (TSMC 0.35 /spl mu/m BiCMOS) technology. At 2.4 GHz, the LNA performs a noise figure of 4.3 dB, associated gain of 11.1 dB, IIP3 of -4.4 dBm, and OIP3 of 5.3 dBm. At 5.8 GHz, the LNA performs a noise figure of 5.4 dB, associated gain of 5.11 dB, IIP3 of 3.7 dBm, and OIP3 of 7.3 dBm. The dc power consumption is 8.4 mW and the chip size is 0.86 /spl times/ 0.58 mm/sup 2/.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2005.1598907","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

A common-base cascade dual-band low noise amplifier (LNA) for 2.4 and 5.8 GHz is presented in this paper. The LNA design is based on SiGe HBT (TSMC 0.35 /spl mu/m BiCMOS) technology. At 2.4 GHz, the LNA performs a noise figure of 4.3 dB, associated gain of 11.1 dB, IIP3 of -4.4 dBm, and OIP3 of 5.3 dBm. At 5.8 GHz, the LNA performs a noise figure of 5.4 dB, associated gain of 5.11 dB, IIP3 of 3.7 dBm, and OIP3 of 7.3 dBm. The dc power consumption is 8.4 mW and the chip size is 0.86 /spl times/ 0.58 mm/sup 2/.
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一种集成双频SiGe HBT低噪声放大器
提出了一种2.4 GHz和5.8 GHz的共基级联双频低噪声放大器。LNA设计基于SiGe HBT (TSMC 0.35 /spl mu/m BiCMOS)技术。在2.4 GHz时,LNA的噪声系数为4.3 dB,相关增益为11.1 dB, IIP3为-4.4 dBm, OIP3为5.3 dBm。在5.8 GHz时,LNA的噪声系数为5.4 dB,相关增益为5.11 dB, IIP3为3.7 dBm, OIP3为7.3 dBm。直流功耗为8.4 mW,芯片尺寸为0.86 /spl倍/ 0.58 mm/sup 2/。
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