Chengyun Wang, Yicong Chen, Guofu Zhang, Song Kang, Xinran Li, J. She, S. Deng, Jun Chen
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Abstract
In this paper, we developed a temporal response model of gated ZnO nanowire field emitter arrays (FEAs) which considers the effects of distributed RC parameters and emission current induced heating process of the ZnO nanowire. The temporal response of the FEAs under different addressing schemes, including single pixel and multi-row configurations, were simulated. The relevant factors affecting the response were discussed. This research provides an important basis for design of large area ZnO nanowire FEAs with high response.
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