{"title":"GaAs MESFET Optimization and New Device Applications Based on Wave Property Studies","authors":"K. Fricke, H. Hartnagel","doi":"10.1109/MWSYM.1985.1131938","DOIUrl":null,"url":null,"abstract":"The results to be presented are obtained by an experimental investigation of the wave properties on FET structures using especially fabricated MESFETs. The use of this information for an optimization of MESFET structures and for a development of new devices is discussed. It will be demonstrated that a significant improvement of the FET gain is obtainable.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"384 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1985.1131938","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
The results to be presented are obtained by an experimental investigation of the wave properties on FET structures using especially fabricated MESFETs. The use of this information for an optimization of MESFET structures and for a development of new devices is discussed. It will be demonstrated that a significant improvement of the FET gain is obtainable.
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