{"title":"A novel monolithic HEMT harmonic mixer at Q-band","authors":"R. Katz, S. Maas, A. Sharma, D. Smith","doi":"10.1109/MCS.1995.470995","DOIUrl":null,"url":null,"abstract":"A novel Q-band monolithic harmonic mixer has been designed and fabricated using the 0.15 /spl mu/m pseudomorphic InGaAs-GaAs HEMT process for the first time. This high performance mixer is capable of downconverting a Q-band RF signal with the 12th, 14th or 16th harmonic of a S-band LO signal to produce a signal suitable for a phase locked loop. This compact mixer consists of antiparallel HEMT Schottky diodes with a lumped element IF and LO diplexer and a RF band-pass filter. Measured data shows agreement between simulations and measurements. Total chip size is 1.0 mm/spl times/2.5 mm.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1995.470995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
A novel Q-band monolithic harmonic mixer has been designed and fabricated using the 0.15 /spl mu/m pseudomorphic InGaAs-GaAs HEMT process for the first time. This high performance mixer is capable of downconverting a Q-band RF signal with the 12th, 14th or 16th harmonic of a S-band LO signal to produce a signal suitable for a phase locked loop. This compact mixer consists of antiparallel HEMT Schottky diodes with a lumped element IF and LO diplexer and a RF band-pass filter. Measured data shows agreement between simulations and measurements. Total chip size is 1.0 mm/spl times/2.5 mm.<>
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