A 6–18 GHz GaN on SiC High Power Amplifier MMIC for Electronic Warfare

Eduardo Oreia-Gigorro, Emilio Delgado Pascual, Juan José Sánchez-Martínez, María Luz Gil-Heras, Virginia Bueno-Fernández, Antonio Bódalo-Márquez, J. Grajal
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引用次数: 6

Abstract

A 6–18 GHz high power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two stage corporate amplifier. It has been designed at Indra Sistemas and fabricated on a European foundry using a 0.25 $\mu$ m process. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation.
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用于电子战的6-18 GHz GaN on SiC高功率放大器MMIC
提出了一种基于GaN on SiC技术的6 - 18ghz高功率放大器的设计方案。该功率放大器由两级联合放大器组成。它是在Indra Sistemas设计的,并在一家欧洲铸造厂使用0.25美元的工艺制造的。该HPA的平均输出功率为39.2 dBm,饱和时的平均增益为11 dB,脉冲模式工作时的最大功率增加效率为24.5%。
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