{"title":"Stability and applications of high-temperature piezoelectric crystals","authors":"H. Fritze, M. Schulz, D. Richter","doi":"10.1109/OMEE.2014.6912420","DOIUrl":null,"url":null,"abstract":"High-temperature piezoelectric crystals such as gallium phosphate (GaPO4) and langasite (La3Ga5SiO14) have been demonstrated to show piezoelectric properties at fairly high temperatures. For example, langasite can be exited piezoelectrically up to temperatures close to its melting point at about 1470 °C. The resonance behavior including damping and temperature dependent frequency of resonators made of these crystals are investigated and reviewed to evaluate the applicability of such devices as high-temperature gas sensors or film deposition monitors.","PeriodicalId":142377,"journal":{"name":"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEE.2014.6912420","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
High-temperature piezoelectric crystals such as gallium phosphate (GaPO4) and langasite (La3Ga5SiO14) have been demonstrated to show piezoelectric properties at fairly high temperatures. For example, langasite can be exited piezoelectrically up to temperatures close to its melting point at about 1470 °C. The resonance behavior including damping and temperature dependent frequency of resonators made of these crystals are investigated and reviewed to evaluate the applicability of such devices as high-temperature gas sensors or film deposition monitors.
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