A Q-Band Low-Noise Amplifier in 40-nm CMOS for Q/V-band satellite communications

Abstract

This paper proposes a Q-band single-ended LNA fabricated in 40-nm CMOS technology, where two-stage cascode topology and inductive source degeneration technique are employed. The proposed LNA has achieved a lowest NF of 4.3 dB, and a maximum power gain of 24.2 dB with a 3-dB bandwidth of 11 GHz, consuming 17.85 mW dc power from a 1.5 V supply.