Analysis of Four-Stage Charge Pump Circuit for UHF RFID Tag Design

Savio Jay Sengupta, Dipanjan Sen, Subhashis Roy, Sudhabindu Ray, S. Sarkar
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Abstract

This work presents the analysis of a charge pump circuit for UHF RFID tag design using 22nm CMOS technology. A charge pump circuit is basically a DC to DC converter. This circuit can be used in many systems for its high performance and low power consumption. Hence, this voltage charge pump circuit can be used in low voltage applications such as in RFID tag's EEPROM. This charge pump circuit has been used as a part of the power supply unit of a fully integrated RFID transponder IC. This modified circuit can generate a stable output voltage with low power dissipation and higher gain for RFID applications. Measured output of this circuit at 433MHz frequency with 1pF of pumping capacitor value, is 3.48V which is more than the value of the industry standardized voltage 3.3V. The extensive simulations are done by using T-spice simulator.
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超高频RFID标签设计中的四级电荷泵电路分析
本文介绍了一种利用22nm CMOS技术设计超高频RFID标签的电荷泵电路。电荷泵电路基本上是一个直流到直流的转换器。该电路性能优异,功耗低,可用于多种系统。因此,这种电压电荷泵电路可用于低电压应用,如RFID标签的EEPROM。该电荷泵电路已被用作完全集成的RFID应答器IC的电源单元的一部分。该改进电路可以为RFID应用产生稳定的输出电压,功耗低,增益高。该电路在433MHz频率下,泵浦电容值为1pF时的实测输出为3.48V,高于行业标准电压3.3V的值。利用T-spice模拟器进行了大量的仿真。
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