{"title":"Compact 2-RC Model for Lateral NQS Effects in SiGe HBTs","authors":"Sandip Ghosh, Shon Yadav, A. Chakravorty","doi":"10.1109/ICEE56203.2022.10118193","DOIUrl":null,"url":null,"abstract":"A physics-based model is proposed to accurately capture the lateral non-quasi-static (LNQS) effects in SiGe HBTs. The model uses new methodology to implement the internal base impedance of the device using two-RC circuits. Equations of all base impedance related components associated with the two-RC network are derived. The proposed model is implemented in Verilog-A. The small-signal AC and the large-signal transient simulations show that the two-RC model yields significantly more accurate results when compared with those of the state-of-the-art model and the π-model.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEE56203.2022.10118193","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A physics-based model is proposed to accurately capture the lateral non-quasi-static (LNQS) effects in SiGe HBTs. The model uses new methodology to implement the internal base impedance of the device using two-RC circuits. Equations of all base impedance related components associated with the two-RC network are derived. The proposed model is implemented in Verilog-A. The small-signal AC and the large-signal transient simulations show that the two-RC model yields significantly more accurate results when compared with those of the state-of-the-art model and the π-model.