Negative-differential-conductance RTD amplifier MMIC with record foms of gain-to-dc power ratio and noise figure

Jongwon Lee, Jooseok Lee, Maengkyu Kim, Kyounghoon Yang
{"title":"Negative-differential-conductance RTD amplifier MMIC with record foms of gain-to-dc power ratio and noise figure","authors":"Jongwon Lee, Jooseok Lee, Maengkyu Kim, Kyounghoon Yang","doi":"10.1109/ICIPRM.2014.6880528","DOIUrl":null,"url":null,"abstract":"An ultralow-dc-power negative-differential-conductance (NDC) microwave amplifier using resonant tunneling diodes (RTDs) is presented and its noise figure characteristic is for the first time reported. The fabricated amplifier exhibits an extremely low dc-power consumption of 155 μW along with good RF performances of an RF gain of 8.1 dB, a return loss of more than 11 dB, and a noise figure of 4.5 dB at 5.5 GHz. The gain-to-dc power ratio was estimated to be 52.2 dB/mW. The figures-of-merit (FOMs) of the achieved gain-to-dc power ratio and noise figure are record for sub-mW low-power monolithic amplifiers at the related frequency band.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

An ultralow-dc-power negative-differential-conductance (NDC) microwave amplifier using resonant tunneling diodes (RTDs) is presented and its noise figure characteristic is for the first time reported. The fabricated amplifier exhibits an extremely low dc-power consumption of 155 μW along with good RF performances of an RF gain of 8.1 dB, a return loss of more than 11 dB, and a noise figure of 4.5 dB at 5.5 GHz. The gain-to-dc power ratio was estimated to be 52.2 dB/mW. The figures-of-merit (FOMs) of the achieved gain-to-dc power ratio and noise figure are record for sub-mW low-power monolithic amplifiers at the related frequency band.
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负差分电导RTD放大器MMIC,具有增益-直流功率比和噪声系数的记录形式
提出了一种基于谐振隧道二极管的超低直流功率负差导微波放大器,并首次报道了其噪声系数特性。该放大器具有极低的直流功耗(155 μW)和良好的射频性能,在5.5 GHz时射频增益为8.1 dB,回波损耗大于11 dB,噪声系数为4.5 dB。增益-直流功率比估计为52.2 dB/mW。所获得的增益与直流功率比和噪声系数的优值(FOMs)在相关频段的亚毫瓦低功率单片放大器中是创纪录的。
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