Zhongda Li, J. Waldron, R. Dayal, L. Parsa, M. Hella, T. Chow
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引用次数: 13
Abstract
We report our experimental results on high voltage normally-off GaN MOS channel HEMTs (MOSC-HEMT) on silicon substrates with best specific on-resistance (Ron,sp) of 4 mΩ-cm2 and breakdown voltage (BV) of 840V. The switching performance of the device was evaluated by SPICE simulations of a buck-boost converter and showed a system efficiency of 10% higher than that using a commercial GaN HEMT. A bidirectional switch consisted two GaN MOSC-HEMTs were also demonstrated.
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