T. Aziz, M. Salleh, M. Yahaya, K. Triyana, K. Fujita
{"title":"Effect of annealing treatment on the performance of organic solar cell","authors":"T. Aziz, M. Salleh, M. Yahaya, K. Triyana, K. Fujita","doi":"10.1109/SMELEC.2010.5549471","DOIUrl":null,"url":null,"abstract":"This paper reports the influence of annealing treatment on the performance of organic solar cells. The structure of ITO/PEDOT:PSS/P3HT:PCBM/LiF/Al bulk heterojunction solar cells were fabricated and annealed with three different temperature of 50°C, 100°C and 150°C respectively. IV characteristic of the device found that the annealing treatment might optimize the solar cell performance. For optimum device performance, maximum temperature at 100°C give the short-circuit current density (Jsc) of 0.55 mA/cm2 and energy conversion efficiency (η) ca. 2%. The experimental and the physics behind the improvement will be discussed in this paper.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2010.5549471","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper reports the influence of annealing treatment on the performance of organic solar cells. The structure of ITO/PEDOT:PSS/P3HT:PCBM/LiF/Al bulk heterojunction solar cells were fabricated and annealed with three different temperature of 50°C, 100°C and 150°C respectively. IV characteristic of the device found that the annealing treatment might optimize the solar cell performance. For optimum device performance, maximum temperature at 100°C give the short-circuit current density (Jsc) of 0.55 mA/cm2 and energy conversion efficiency (η) ca. 2%. The experimental and the physics behind the improvement will be discussed in this paper.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
