Using a layer based on materials with a metal to semiconductor phase transition for electrothermal protection of solar cells

A. Tonkoshkur, A. Ivanchenko
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Abstract

One of the main problems in ensuring the reliability of solar electrical power sources is local overheating, when hot spots form in photovoltaic cells of solar arrays. It is currently considered that these negative phenomena are caused, among other things, by overvoltage in the electrical circuits of solar arrays. This leads to the appearance of defective elements and a significant decrease in the functionality of the entire power generation system up to its complete failure. This study considers the possible ways to increase the reliability of solar arrays by using thermistor thermocontacting layers for preventing overvoltage events and overheating. The authors use simulation to study electrical characteristics of a photovoltaic cell in thermal contact with an additional layer based on thermistor materials with a metal to semiconductor phase transition. Vanadium dioxide with a phase transition temperature of ~340 K is considered to be a promising material for this purpose. During the phase transition, electrical resistance sharply decreases from the values characteristic of dielectrics to the values associated with metal conductors. It is shown that such thermistor layers can be used for protecting solar cells from electrical overheating under the following basic conditions: — the layer’s resistance in the «cold» state significantly exceeds that of the lightened forward-biased solar cell; — the layer’s resistance in the «heated» state is sufficiently low compared to those of the reverse-biased photovoltaic cell and of the power source. The current and temperature of the reverse-biased photovoltaic cell are limited and stabilized, and the voltage drop sharply decreases from the moment when the temperature of the thermistor layer reaches the values close to the temperature of its transition to the low-conductivity state. The obtained results substantiate the potntial of the described approach to protect photovoltaic cells of solar modules against electric thermal overloads.
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采用金属到半导体相变材料层,用于太阳能电池的电热保护
保证太阳能电源可靠性的主要问题之一是局部过热,当太阳能电池阵列的光伏电池形成热点时。目前认为,除其他因素外,这些负现象是由太阳能电池阵列电路中的过电压引起的。这导致出现有缺陷的元件,并在整个发电系统的功能显著下降,直至其完全失败。本研究考虑了通过使用热敏电阻热接触层来防止过电压事件和过热来提高太阳能电池阵列可靠性的可能方法。作者利用模拟技术研究了光伏电池在与金属到半导体相变的热敏电阻材料的附加层热接触时的电特性。相变温度为~340 K的二氧化钒被认为是一种很有前途的材料。在相变过程中,电阻从电介质的特征值急剧下降到与金属导体相关的值。研究表明,在以下基本条件下,这种热敏电阻层可以用于保护太阳能电池免受电过热的影响:-层在“冷”状态下的电阻明显超过轻化的正偏太阳能电池的电阻;-层在“热”状态下的电阻与反向偏置光伏电池和电源的电阻相比足够低。反偏光伏电池的电流和温度受到限制和稳定,从热敏电阻层温度达到接近其向低电导率状态过渡的温度的时刻起,电压降急剧下降。所获得的结果证实了所述方法保护太阳能组件的光伏电池免受电热过载的潜力。
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