{"title":"Three-dimensional Field Sensing with Magnetotransistors","authors":"S. Lozanova, A. Ivanov, C. Roumenin","doi":"10.1109/ET.2019.8878505","DOIUrl":null,"url":null,"abstract":"An original p+-n -p+ magnetotransistors for subsequent measurement of three orthogonal magnetic components using a common sensor region is presented. Collector coupling-arrangements are formed for obtaining the information about the full magnetic-field vector. The operation is determined by curvilinear trajectory of holes and Lorentz force deflection on them. The channel outputs are linear and magnetosensitivities reaches Sx≈25µA/T, Sy≈150µA/T and Sz≈345µA/T for device with accelerating field in the base. The cross-talk reaches about 3.0 % at inductionB ≤ 1T.","PeriodicalId":306452,"journal":{"name":"2019 IEEE XXVIII International Scientific Conference Electronics (ET)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE XXVIII International Scientific Conference Electronics (ET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ET.2019.8878505","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An original p+-n -p+ magnetotransistors for subsequent measurement of three orthogonal magnetic components using a common sensor region is presented. Collector coupling-arrangements are formed for obtaining the information about the full magnetic-field vector. The operation is determined by curvilinear trajectory of holes and Lorentz force deflection on them. The channel outputs are linear and magnetosensitivities reaches Sx≈25µA/T, Sy≈150µA/T and Sz≈345µA/T for device with accelerating field in the base. The cross-talk reaches about 3.0 % at inductionB ≤ 1T.
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