A. Kobayashi, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, M. Kasu, Y. Nagai, N. Shigekawa, J. Liang
{"title":"Fabrication and Characterization of GaN/Diamond bonding interface","authors":"A. Kobayashi, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, M. Kasu, Y. Nagai, N. Shigekawa, J. Liang","doi":"10.1109/LTB-3D53950.2021.9598383","DOIUrl":null,"url":null,"abstract":"Direct bonding of diamond and GaN is successfully fabricated by surface activated bonding method. An 80% contact area of diamond and GaN is obtained. The effect of annealing temperature on the structure properties of the bonding interface is investigated under in-situ annealing in a transmission electron microscope (TEM).","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTB-3D53950.2021.9598383","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
Direct bonding of diamond and GaN is successfully fabricated by surface activated bonding method. An 80% contact area of diamond and GaN is obtained. The effect of annealing temperature on the structure properties of the bonding interface is investigated under in-situ annealing in a transmission electron microscope (TEM).
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