Reaction mechanisms and EB patterning evaluation of Sn-complex-side-chain polymer used for EUV lithography

Yui Takata, Y. Muroya, T. Kozawa, S. Enomoto, B. Naqvi, D. De Simone
{"title":"Reaction mechanisms and EB patterning evaluation of Sn-complex-side-chain polymer used for EUV lithography","authors":"Yui Takata, Y. Muroya, T. Kozawa, S. Enomoto, B. Naqvi, D. De Simone","doi":"10.1117/12.2670173","DOIUrl":null,"url":null,"abstract":"Since 2019, the extreme ultraviolet lithography (EUVL) has been applied to the high-volume production of devices. For further scaling, high-numerical aperture (NA) tool and resist materials applicable to high-NA EUVL are required. However, there are no resists applicable to high-NA EUVL. These days, resist materials containing Sn whose EUV absorption cross section is particularly high are attracting much attention. In this research, radiation-induced reaction mechanisms of Sncomplex- side-chain polymers were investigated to obtain the guidelines of material design.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2670173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Since 2019, the extreme ultraviolet lithography (EUVL) has been applied to the high-volume production of devices. For further scaling, high-numerical aperture (NA) tool and resist materials applicable to high-NA EUVL are required. However, there are no resists applicable to high-NA EUVL. These days, resist materials containing Sn whose EUV absorption cross section is particularly high are attracting much attention. In this research, radiation-induced reaction mechanisms of Sncomplex- side-chain polymers were investigated to obtain the guidelines of material design.
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EUV光刻用sn络合侧链聚合物的反应机理及EB图化评价
自2019年以来,极紫外光刻技术(EUVL)已应用于器件的大批量生产。为了进一步缩放,需要适用于高数值孔径EUVL的高数值孔径(NA)工具和抗蚀剂材料。然而,目前还没有适用于高na EUVL的抗蚀剂。近年来,含有锡的抗蚀剂材料因其极紫外光吸收截面特别高而备受关注。本研究研究了单侧链聚合物的辐射诱导反应机理,为材料设计提供指导。
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