{"title":"Thermal properties of Ag sintered layer used as interconnect material in microelectronics packaging","authors":"R. Kisiel, B. Platek, M. Myśliwiec","doi":"10.1109/ISSE.2014.6887568","DOIUrl":null,"url":null,"abstract":"The paper deals with the thermal properties of Ag sintered layer used as interconnect material for SiC die assembly to DBC substrate. In our investigation an IR camera were used for measurement of thermal properties of Ag sintered layers. The changes of thermal conductivity were measured in temperature range from 69°C up to 221°C. The thermal conductivity of Ag sintered layers thickness 15 μm, made from micro particles, a flake shape, was in the range 7-10 W/mK and is stable in this temperature range.","PeriodicalId":375711,"journal":{"name":"Proceedings of the 2014 37th International Spring Seminar on Electronics Technology","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2014 37th International Spring Seminar on Electronics Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSE.2014.6887568","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The paper deals with the thermal properties of Ag sintered layer used as interconnect material for SiC die assembly to DBC substrate. In our investigation an IR camera were used for measurement of thermal properties of Ag sintered layers. The changes of thermal conductivity were measured in temperature range from 69°C up to 221°C. The thermal conductivity of Ag sintered layers thickness 15 μm, made from micro particles, a flake shape, was in the range 7-10 W/mK and is stable in this temperature range.