G. Gasiot, F. Abouzeid, V. Malherbe, J. Damiens, F. Monsieur, C. L. de Boissac, Dimitri Soussan, Vincent Lorquet, T. Théry, P. Roche
{"title":"New Single Event Transient phenomenon in 28FDSOI and its impact on hardening","authors":"G. Gasiot, F. Abouzeid, V. Malherbe, J. Damiens, F. Monsieur, C. L. de Boissac, Dimitri Soussan, Vincent Lorquet, T. Théry, P. Roche","doi":"10.1109/radecs47380.2019.9745659","DOIUrl":null,"url":null,"abstract":"This paper shows measurement of new Single Event Transient in FDSOI28 technology. These SETs come from layers beneath the Buried Oxide connected to active nodes through transistor back-gate (or bulk) contact. These back-gate structures are used for threshold voltage control of transistors in analog circuits. These specific transistors were embedded in an inverter chain with a SET detection apparatus manufactured in a test vehicle processed in FDSOI28 technology. Radiation experiments were performed as well as circuit and TCAD simulations to deepen our understanding of this phenomenon. These SETs have implications for radiation-hardening-by-design that are discussed in this paper.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs47380.2019.9745659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper shows measurement of new Single Event Transient in FDSOI28 technology. These SETs come from layers beneath the Buried Oxide connected to active nodes through transistor back-gate (or bulk) contact. These back-gate structures are used for threshold voltage control of transistors in analog circuits. These specific transistors were embedded in an inverter chain with a SET detection apparatus manufactured in a test vehicle processed in FDSOI28 technology. Radiation experiments were performed as well as circuit and TCAD simulations to deepen our understanding of this phenomenon. These SETs have implications for radiation-hardening-by-design that are discussed in this paper.
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