Triboelectric Charging Damage in Silicon-on-Insulator Devices

Abstract

Integrated circuits are subjected to various forms of friction during fabrication and packaging, creating potential problems due to the buildup of charge. This article looks at the distinct characteristics of triboelectric charging damage on silicon-on-insulator devices at the wafer and package level. Telltale signs of this type of damage include spatial dependency, distinct TIVA-signal patterns, and bimodal static current distributions with significant changes after burn-in.