Zheng Li, Xiuyuan Bi, Hai Helen Li, Yiran Chen, J. Qin, Peng Guo, W. Kong, W. Zhan, Xiufeng Han, Hong Zhang, Lingling Wang, Guanping Wu, Hanming Wu
{"title":"Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ","authors":"Zheng Li, Xiuyuan Bi, Hai Helen Li, Yiran Chen, J. Qin, Peng Guo, W. Kong, W. Zhan, Xiufeng Han, Hong Zhang, Lingling Wang, Guanping Wu, Hanming Wu","doi":"10.1145/2934583.2934611","DOIUrl":null,"url":null,"abstract":"Programmability is as a severe challenge in development of spin-transfer torque magnetic random access memory (STT-MRAM). Theoretical analysis have indicated that nano-ring shaped magnetic tunneling junction (NR-MTJ) can achieve lower write current and higher write reliability compared to conventional elliptical-shaped MTJ (E-MTJ). In this work, we successfully patterned the NR-MTJ with 200nm outer diameter and 120nm inner diameter in commercial manufacturing facility, designed and fabricated a 4Kb STT-MRAM test chip with NR-MTJs. Testing results demonstrated successful read and write functionalities of our chip, and proved the theocratically-predicted electrical properties of NR-MTJs.","PeriodicalId":142716,"journal":{"name":"Proceedings of the 2016 International Symposium on Low Power Electronics and Design","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2016 International Symposium on Low Power Electronics and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2934583.2934611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Programmability is as a severe challenge in development of spin-transfer torque magnetic random access memory (STT-MRAM). Theoretical analysis have indicated that nano-ring shaped magnetic tunneling junction (NR-MTJ) can achieve lower write current and higher write reliability compared to conventional elliptical-shaped MTJ (E-MTJ). In this work, we successfully patterned the NR-MTJ with 200nm outer diameter and 120nm inner diameter in commercial manufacturing facility, designed and fabricated a 4Kb STT-MRAM test chip with NR-MTJs. Testing results demonstrated successful read and write functionalities of our chip, and proved the theocratically-predicted electrical properties of NR-MTJs.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
