A. Gutierrez-Aitken, K. Hennig, D. Scott, Kenneth F. Sato, Wes Chan, B. Poust, Xiang Zeng, K. Thai, Eric B. Nakamura, E. Kaneshiro, Nancy Lin, C. Monier, I. Smorchkova, B. Oyama, A. Oki, R. Kagiwada, G. Chao
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引用次数: 21
Abstract
Northrop Grumman Aerospace Systems (NGAS) under the Diverse Accessible Heterojunction Integration (DAHI) DARPA program is developing heterogeneous integration processes, process design kit (PDK) and thermal analysis tools to integrate deep submicron CMOS, Indium Phosphide (InP) heterojunction bipolar transistors (HBTs), Gallium Nitride (GaN) high electron mobility transistors (HEMTs) and high-Q passive technologies for advanced DoD and other government systems.
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