{"title":"Steady-state and transient photocurrents of As-S-Sb-Te amorphous thin films","authors":"O. V. Iaseniuc, M. S. Iovu","doi":"10.15251/cl.2023.2010.725","DOIUrl":null,"url":null,"abstract":"In the present work some nanostructured quaternary chalcogenides of the As-S-Sb-Te system have been investigated by a photoelectric method. The spectral distribution of steadystate photocurrent Iph=(λ) and the relaxation curves of photocurrent Iph=(t) were registered at positive and negative polarity of the applied voltage to the top Al illuminated electrode. In the spectral distribution of steady-state photocurrent, for the amorphous thin films As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 in the wavelength range λ=0.50÷0.92 mm (2.48÷1.35 eV) some maxima were detected, which are the result of the presence of binary clusters As2S3, Sb2S3 and Sb2S3. The photovoltaic method was used to obtain the value of the band gap width, which was about Eg =1.41 eV.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"56 16","pages":"0"},"PeriodicalIF":1.2000,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chalcogenide Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15251/cl.2023.2010.725","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In the present work some nanostructured quaternary chalcogenides of the As-S-Sb-Te system have been investigated by a photoelectric method. The spectral distribution of steadystate photocurrent Iph=(λ) and the relaxation curves of photocurrent Iph=(t) were registered at positive and negative polarity of the applied voltage to the top Al illuminated electrode. In the spectral distribution of steady-state photocurrent, for the amorphous thin films As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 in the wavelength range λ=0.50÷0.92 mm (2.48÷1.35 eV) some maxima were detected, which are the result of the presence of binary clusters As2S3, Sb2S3 and Sb2S3. The photovoltaic method was used to obtain the value of the band gap width, which was about Eg =1.41 eV.
期刊介绍：
Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and
appears with twelve issues per year. The journal is open to letters, short communications and breakings news
inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in
structure, properties and applications, as well as those covering special properties in nano-structured
chalcogenides are admitted.
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