Metal-pattern preparation based on selective deposition using soft organofluorine surfaces

Tsuyoshi Tsujioka
{"title":"Metal-pattern preparation based on selective deposition using soft organofluorine surfaces","authors":"Tsuyoshi Tsujioka","doi":"10.1116/6.0002832","DOIUrl":null,"url":null,"abstract":"Metal-pattern formation using vacuum evaporation is a critical process from basic research to industrial mass-production. Selective metal deposition using metal-atom desorption from an organic surface is a promising metal-patterning method by maskless vacuum deposition. In this study, we demonstrate metal-pattern formation by maskless deposition for various metal species using a vacuum-depositable and printable perfluoropolyether (PFPE) based material. A PFPE-based film has a low dispersion component of surface free energy and surface softness, and its surface has the ability to efficiently desorb for various metals. This method, which enables metal-pattern formation using maskless vacuum deposition for a variety of metal species with a high melting point and low intrinsic vapor pressure, including Ag, Cr, and Ni, can be applied to such applications as electrode-pattern formations.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0002832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Metal-pattern formation using vacuum evaporation is a critical process from basic research to industrial mass-production. Selective metal deposition using metal-atom desorption from an organic surface is a promising metal-patterning method by maskless vacuum deposition. In this study, we demonstrate metal-pattern formation by maskless deposition for various metal species using a vacuum-depositable and printable perfluoropolyether (PFPE) based material. A PFPE-based film has a low dispersion component of surface free energy and surface softness, and its surface has the ability to efficiently desorb for various metals. This method, which enables metal-pattern formation using maskless vacuum deposition for a variety of metal species with a high melting point and low intrinsic vapor pressure, including Ag, Cr, and Ni, can be applied to such applications as electrode-pattern formations.
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基于软有机氟表面选择性沉积的金属图案制备
利用真空蒸发形成金属图案是从基础研究到工业批量生产的关键过程。利用有机表面金属原子解吸选择性金属沉积是一种很有前途的无掩膜真空沉积金属图像化方法。在这项研究中,我们展示了利用真空沉积和可打印的全氟聚醚(PFPE)基材料,通过无掩模沉积各种金属物种形成金属图案。ppe基薄膜具有表面自由能分散成分低、表面柔软性好、对多种金属具有有效解吸的能力。这种方法可以使用无掩膜真空沉积方法,对各种具有高熔点和低固有蒸汽压的金属(包括Ag、Cr和Ni)形成金属图案,可以应用于电极图案形成等应用。
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