Effect of atomic-scale microstructures on TiZrV non-evaporable getter film activation

Qingzhi Shi, Sihui Wang, Pengcheng Wang, Yongsheng Ma, Biao Tan, Shiyuan Shi, Tao Huang, Tao Huang, Fei Sun, Lixin Wang, Xiaoguang Zhao, Shuping Chen, Meitong Lu
{"title":"Effect of atomic-scale microstructures on TiZrV non-evaporable getter film activation","authors":"Qingzhi Shi, Sihui Wang, Pengcheng Wang, Yongsheng Ma, Biao Tan, Shiyuan Shi, Tao Huang, Tao Huang, Fei Sun, Lixin Wang, Xiaoguang Zhao, Shuping Chen, Meitong Lu","doi":"10.1116/6.0002992","DOIUrl":null,"url":null,"abstract":"Non-evaporable getter (NEG) films are widely used in high vacuum technologies and have played a critical role in applications requiring ultrahigh vacuum conditions, such as accelerator vacuum systems. The passivation layers on the film surface due to air exposure generally require thermal vacuum activation. This research aims to elucidate the key factor in the activation of TiZrV NEG films from the perspective of atomic-scale microstructures. The characteristics of film element distributions, morphologies, and crystalline states before and after activation were investigated by energy dispersive spectroscopy, scanning electron microscopy, and grazing incidence x-ray diffraction. In situ x-ray photoelectron spectroscopy was used to detect compositional variations in the film surface layer at different activation temperatures. According to the analysis, from an atomic-scale perspective, the easily activated structures would degrade in activation performance when surrounded by structures that are difficult to activate. During activation, the activated structures tend to act as channels for foreign atoms until the surrounding structures are fully activated. Hydroxyl and carbonyl groups are generally easier to activate than hydrocarbons and surface carbides, but even groups of the same type vary greatly in activation difficulty due to the differences in atomic-scale microstructures on the film surface. These findings provide valuable insight into the activation of NEG films and may be beneficial in the design of novel NEG films with excellent activation performance.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":"26 24","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0002992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Non-evaporable getter (NEG) films are widely used in high vacuum technologies and have played a critical role in applications requiring ultrahigh vacuum conditions, such as accelerator vacuum systems. The passivation layers on the film surface due to air exposure generally require thermal vacuum activation. This research aims to elucidate the key factor in the activation of TiZrV NEG films from the perspective of atomic-scale microstructures. The characteristics of film element distributions, morphologies, and crystalline states before and after activation were investigated by energy dispersive spectroscopy, scanning electron microscopy, and grazing incidence x-ray diffraction. In situ x-ray photoelectron spectroscopy was used to detect compositional variations in the film surface layer at different activation temperatures. According to the analysis, from an atomic-scale perspective, the easily activated structures would degrade in activation performance when surrounded by structures that are difficult to activate. During activation, the activated structures tend to act as channels for foreign atoms until the surrounding structures are fully activated. Hydroxyl and carbonyl groups are generally easier to activate than hydrocarbons and surface carbides, but even groups of the same type vary greatly in activation difficulty due to the differences in atomic-scale microstructures on the film surface. These findings provide valuable insight into the activation of NEG films and may be beneficial in the design of novel NEG films with excellent activation performance.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
原子尺度微结构对TiZrV非蒸发吸气剂膜活化的影响
非蒸发吸气剂(NEG)薄膜广泛应用于高真空技术,在加速器真空系统等需要超高真空条件的应用中起着至关重要的作用。由于空气暴露,膜表面的钝化层通常需要热真空活化。本研究旨在从原子尺度的微观结构角度阐明TiZrV NEG膜活化的关键因素。利用能量色散光谱、扫描电镜和掠入射x射线衍射研究了活化前后膜元素分布、形貌和晶体状态的特征。采用原位x射线光电子能谱法检测了不同活化温度下薄膜表层成分的变化。分析表明,从原子尺度上看,容易活化的结构被难以活化的结构包围时,其活化性能会下降。在激活过程中,被激活的结构倾向于充当外来原子的通道,直到周围的结构被完全激活。羟基和羰基通常比碳氢化合物和表面碳化物更容易活化,但即使是相同类型的基团,由于膜表面原子尺度微观结构的差异,活化难度也有很大差异。这些发现为研究NEG膜的活化提供了有价值的见解,并可能有助于设计具有优异活化性能的新型NEG膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Interfacial reactivity in the Co/CuO samples as investigated by x-ray photoelectron spectroscopy Modification of discharge sequences to control the random dispersion of flake particles during wafer etching Effect of atomic-scale microstructures on TiZrV non-evaporable getter film activation E-mode AlGaN/GaN HEMTs using p-NiO gates Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1