Gain layer degradation study after neutron and proton irradiations in Low Gain Avalanche Diodes

Abstract

Abstract The high-luminosity upgrade of the ATLAS and CMS experiments includes dedicated sub-detectors to perform the time-stamping of minimum ionizing particles (MIPs). These detectors will be exposed up to fluences in the range of 1.5-2.5 × 10 15 n eq /cm 2 at the end of their lifetime and, Low Gain Avalanche Diode (LGAD) has been chosen as their baseline detection technology. To better understand the performance of LGAD detectors in these environments, a gain layer degradation study after neutron and proton irradiations up to a fluence of 1.5 × 10 15 n eq /cm 2 was performed. LGADs manufactured at Hamamatsu Photonics (HPK) and Centro Nacional de Microelectrónica (CNM-IMB) were chosen for this study and, a comparison in the gain layer degradation after exposure to reactor neutrons at the Jožef Stefan Institute (JSI) in Ljubjana and 24 GeV/c protons at the CERN-PS is presented here.