Vertically Stacked Stepped Oxide Split-Pocket VTFET as a Label Free Biosensor

Abstract

AbstractIn this manuscript, a new vertically stacked GaSb-source stepped oxide split-pocket vertical dielectrically modulated tunnel field effect transistor (SOSPVDMTFET) is presented for the first time. The novelty of this device lies in its stepped oxides with full gate length cavity and n + split-pockets in source region. These design features significantly suppress the ambipolar current at drain/channel junction and improves the drain current (ION), subthreshold swing (SS), threshold voltage (Vth), and current ratio (Iratio). In addition, it enhances the RF parameters such as transconductance (gm), maximum cut-off frequency (fT), transit time (τ), and device efficiency. It is found that the drain current sensitivity of the proposed device is 3000 times higher than the work reported in [Theja and Panchore, “Performance investigation of GaSb/Si heterojunction based gate underlap and overlap vertical TFET biosensor,” IEEE Trans. Nano Biosci., Vol. 22, no. 2, pp. 284–91, 2022]. Further, the behavior of biomolecules at different subcavity regions (R1, R2, R3) and cavity thickness has been investigated. The effect of non uniform distribution of biomolecule in cavity region is also discussed.KEYWORDS: Ambipolaritybiosensorstepped oxide (SO)split-pocket (SP)GaSb-source Stepped Oxide Split-Pocket Vertical Biosensor (SOSPVB) ACKNOWLEDGEMENTSThe authors would like to thank Dr. Shivendra Yadav from Department of Electronics Engineering, Sardar Vallabhbhai National Institute of Technology, Surat, India for providing valuable suggestions and support to carry out this research work.DISCLOSURE STATEMENTNo potential conflict of interest was reported by the author(s).Additional informationNotes on contributorsMadhulika VermaMadhulika Verma is currently pursuing the PhD degree with the ECE department from National Institute of Technology Delhi. She has completed her Mtech in micro-nano electronics (ECE) from PDPM IIITDM Jabalpur in 2017, and Btech in ECE from the IPEC Ghaziabad in 2013. Her area of interest is nanoscale devices and their biosensor applications. Email: madhulika53@nitdelhi.ac.inSachin AgrawalSachin Agrawal completed his PhD from IIITDM Jabalpur in 2018. He has completed his ME from Birla Institute of Technology Pilani, India in 2009. Currently, he is working as an assistant professor at National Institute of Technology Delhi. His area of interest is RF energy harvesting, antenna designing and mobile communication. SujalSujal is currently pursuing a Btech degree in electronics and communication engineering from National Institute of Technology Delhi, India (2020–2024). His current research interests include TFET. Email: 201220045@nitdelhi.ac.inMohit MeenaMohit Meena is currently pursuing a Btech degree in electronics and communication engineering from National Institute of Technology Delhi, India (2020–2024). His current research interests include TFET. Email: 201220029@nitdelhi.ac.in