首页 > 最新文献

IETE Technical Review最新文献

英文 中文
Radiation Effects in VLSI Circuits – Part I: Historical Perspective 超大规模集成电路中的辐射效应--第一部分:历史视角
IF 2.4 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-12 DOI: 10.1080/02564602.2024.2380904
Aryan Kannaujiya, Ambika Prasad Shah
This review explains the historical perspective of single-event effects, single-event transitions, and single-event upsets. It delves into the concept of critical charge and offers a comprehensive ...
这篇综述从历史角度解释了单次事件效应、单次事件转换和单次事件颠覆。它深入探讨了临界电荷的概念,并提供了全面的...
{"title":"Radiation Effects in VLSI Circuits – Part I: Historical Perspective","authors":"Aryan Kannaujiya, Ambika Prasad Shah","doi":"10.1080/02564602.2024.2380904","DOIUrl":"https://doi.org/10.1080/02564602.2024.2380904","url":null,"abstract":"This review explains the historical perspective of single-event effects, single-event transitions, and single-event upsets. It delves into the concept of critical charge and offers a comprehensive ...","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"1 1","pages":""},"PeriodicalIF":2.4,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mental Wellness and Academic Achievement: Navigating Entrance Tests with Confidence 心理健康与学习成绩:自信应对入学考试
IF 2.4 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-01 DOI: 10.1080/02564602.2024.2366058
Mamidala Jagadesh Kumar
Published in IETE Technical Review (Vol. 41, No. 4, 2024)
发表于《IETE 技术评论》(第 41 卷第 4 期,2024 年)
{"title":"Mental Wellness and Academic Achievement: Navigating Entrance Tests with Confidence","authors":"Mamidala Jagadesh Kumar","doi":"10.1080/02564602.2024.2366058","DOIUrl":"https://doi.org/10.1080/02564602.2024.2366058","url":null,"abstract":"Published in IETE Technical Review (Vol. 41, No. 4, 2024)","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"84 1","pages":""},"PeriodicalIF":2.4,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141503952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Distance Measurement Method for Perceptual Image Hashing 感知图像加密的新距离测量方法
IF 2.4 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-05-02 DOI: 10.1080/02564602.2024.2347324
Xinran Li, Chuan Qin, Zichi Wang, Xinpeng Zhang, Zhenjun Tang
A large number of perceptual image hashing schemes have been developed in recent decades, and they usually calculated the hash distances using Euclidean distance, correlation coefficient, normalize...
近几十年来,人们开发了大量感知图像散列方案,这些方案通常使用欧氏距离、相关系数、归一化等方法计算散列距离。
{"title":"A New Distance Measurement Method for Perceptual Image Hashing","authors":"Xinran Li, Chuan Qin, Zichi Wang, Xinpeng Zhang, Zhenjun Tang","doi":"10.1080/02564602.2024.2347324","DOIUrl":"https://doi.org/10.1080/02564602.2024.2347324","url":null,"abstract":"A large number of perceptual image hashing schemes have been developed in recent decades, and they usually calculated the hash distances using Euclidean distance, correlation coefficient, normalize...","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"95 1","pages":""},"PeriodicalIF":2.4,"publicationDate":"2024-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140928312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deep Learning Approach for Gait Detection for Precise Stimulation of FES to Correct Foot Drop 用于步态检测的深度学习方法,可精确刺激 FES 以矫正足下垂
IF 2.4 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-05-02 DOI: 10.1080/02564602.2024.2344779
Bijit Basumatary, Rajat Suvra Halder, Chirag Singhal, Adarsha Narayan Mallick, Arun Khokhar, Rajinder Bansal, Ashish Kumar Sahani
Automatic detection of foot lift is one of the most important events of Functional Electrical Stimulation (FES). The FES system is used for the correction of Foot Drop (FD). FD is a condition where...
自动检测抬脚是功能性电刺激(FES)最重要的功能之一。FES 系统用于矫正足下垂(FD)。足下垂是一种...
{"title":"Deep Learning Approach for Gait Detection for Precise Stimulation of FES to Correct Foot Drop","authors":"Bijit Basumatary, Rajat Suvra Halder, Chirag Singhal, Adarsha Narayan Mallick, Arun Khokhar, Rajinder Bansal, Ashish Kumar Sahani","doi":"10.1080/02564602.2024.2344779","DOIUrl":"https://doi.org/10.1080/02564602.2024.2344779","url":null,"abstract":"Automatic detection of foot lift is one of the most important events of Functional Electrical Stimulation (FES). The FES system is used for the correction of Foot Drop (FD). FD is a condition where...","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"15 1","pages":""},"PeriodicalIF":2.4,"publicationDate":"2024-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140832526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Forging Connections: Integrating Indian Knowledge Systems in Higher Education 建立联系:在高等教育中整合印度知识体系
IF 2.4 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-05-01 DOI: 10.1080/02564602.2024.2342625
Mamidala Jagadesh Kumar
Published in IETE Technical Review (Vol. 41, No. 3, 2024)
发表于《IETE 技术评论》(第 41 卷第 3 期,2024 年)
{"title":"Forging Connections: Integrating Indian Knowledge Systems in Higher Education","authors":"Mamidala Jagadesh Kumar","doi":"10.1080/02564602.2024.2342625","DOIUrl":"https://doi.org/10.1080/02564602.2024.2342625","url":null,"abstract":"Published in IETE Technical Review (Vol. 41, No. 3, 2024)","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"36 1","pages":""},"PeriodicalIF":2.4,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140832525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and Development of GaN-Based Power Amplifier for Radar Applications 设计和开发基于氮化镓的雷达应用功率放大器
IF 2.4 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-04-30 DOI: 10.1080/02564602.2024.2341056
Ambudhi Shukla, K. P. Ray
This paper presents a comprehensive overview of Gallium nitride (GaN)-based power amplifier (PA) design for various frequency bands. GaN-based technology has emerged as a promising alternative to t...
本文全面概述了各种频段基于氮化镓(GaN)的功率放大器(PA)设计。基于氮化镓的技术已成为一种很有前途的替代技术。
{"title":"Design and Development of GaN-Based Power Amplifier for Radar Applications","authors":"Ambudhi Shukla, K. P. Ray","doi":"10.1080/02564602.2024.2341056","DOIUrl":"https://doi.org/10.1080/02564602.2024.2341056","url":null,"abstract":"This paper presents a comprehensive overview of Gallium nitride (GaN)-based power amplifier (PA) design for various frequency bands. GaN-based technology has emerged as a promising alternative to t...","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"21 1","pages":""},"PeriodicalIF":2.4,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140841786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TCAD Simulation of Novel Recess Gate Common Drain Dual Channel AlGaN/GaN HEMT for Small Signal Performance 针对小信号性能的新型凹槽栅共漏双通道 AlGaN/GaN HEMT 的 TCAD 仿真
IF 2.4 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-04-15 DOI: 10.1080/02564602.2024.2341086
P. Pal, Y. Pratap, S. Kabra
In this paper, DC and RF characteristics of Recess Gate Common Drain Dual Channel (CDDC) AlGaN/GaN HEMT have been investigated. The performance of the device in terms of the various figures of meri...
本文研究了凹栅共漏极双通道(CDDC)AlGaN/GaN HEMT 的直流和射频特性。该器件在各种性能指标方面的表现令人满意。
{"title":"TCAD Simulation of Novel Recess Gate Common Drain Dual Channel AlGaN/GaN HEMT for Small Signal Performance","authors":"P. Pal, Y. Pratap, S. Kabra","doi":"10.1080/02564602.2024.2341086","DOIUrl":"https://doi.org/10.1080/02564602.2024.2341086","url":null,"abstract":"In this paper, DC and RF characteristics of Recess Gate Common Drain Dual Channel (CDDC) AlGaN/GaN HEMT have been investigated. The performance of the device in terms of the various figures of meri...","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"66 1","pages":""},"PeriodicalIF":2.4,"publicationDate":"2024-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140593687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cluster Synchronization of Networks of Chaotic Systems: A Comprehensive Review of Theory and Applications 混沌系统网络的簇同步:理论与应用综述
IF 2.4 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-04-15 DOI: 10.1080/02564602.2024.2341076
Akshay Kumar Jaiswal, Bharat Bhushan Sharma
Phenomenon of cluster synchronization has captured the curiosity of scientists in the study of nonlinear dynamics over the last few decades. It is a well-known and intriguing aspect of complex syst...
过去几十年来,群集同步现象一直吸引着研究非线性动力学的科学家们的好奇心。它是复杂系统中一个众所周知且引人入胜的方面。
{"title":"Cluster Synchronization of Networks of Chaotic Systems: A Comprehensive Review of Theory and Applications","authors":"Akshay Kumar Jaiswal, Bharat Bhushan Sharma","doi":"10.1080/02564602.2024.2341076","DOIUrl":"https://doi.org/10.1080/02564602.2024.2341076","url":null,"abstract":"Phenomenon of cluster synchronization has captured the curiosity of scientists in the study of nonlinear dynamics over the last few decades. It is a well-known and intriguing aspect of complex syst...","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"48 1","pages":""},"PeriodicalIF":2.4,"publicationDate":"2024-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140593697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Call for nomination IETE Corporate awards - 2024 征集 IETE 企业奖提名 - 2024 年
IF 2.4 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-04-01 DOI: 10.1080/02564602.2024.2333110
Published in IETE Technical Review (Vol. 41, No. 2, 2024)
发表于《IETE 技术评论》(第 41 卷第 2 期,2024 年)
{"title":"Call for nomination IETE Corporate awards - 2024","authors":"","doi":"10.1080/02564602.2024.2333110","DOIUrl":"https://doi.org/10.1080/02564602.2024.2333110","url":null,"abstract":"Published in IETE Technical Review (Vol. 41, No. 2, 2024)","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"29 1","pages":""},"PeriodicalIF":2.4,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140593592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Call for nomination IETE Main awards - 2024 IETE 主要奖项提名征集 - 2024 年
IF 2.4 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-04-01 DOI: 10.1080/02564602.2024.2333109
Published in IETE Technical Review (Vol. 41, No. 2, 2024)
发表于《IETE 技术评论》(第 41 卷第 2 期,2024 年)
{"title":"Call for nomination IETE Main awards - 2024","authors":"","doi":"10.1080/02564602.2024.2333109","DOIUrl":"https://doi.org/10.1080/02564602.2024.2333109","url":null,"abstract":"Published in IETE Technical Review (Vol. 41, No. 2, 2024)","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"28 1","pages":""},"PeriodicalIF":2.4,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140593692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
IETE Technical Review
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1