Structural, electronic, elastic, and optical properties of chalcogenide perovskite SrZrS3 under ambient and high-pressure conditions

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Chalcogenide Letters Pub Date : 2023-09-20 DOI:10.15251/cl.2023.208.619
M. L. Han, Y. Hu
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Abstract

Hydrostatic pressure is an effective tool that can give rise to novel crystal structures and physical properties. In this paper, we perform the first-principles calculation based on density-functional theory (DFT) to study the structural, electronic, elastic, and optical properties of chalcogenide perovskite SrZrS3 under pressure. The results indicated that both the lattice constant and cell volume decrease with the increase of pressure, which are matched well with available previous values. The obtained elastic constants reveal the SrZrS3 is mechanically stable between 0 and 15 GPa. Additionally, the main features of the valence and conduction bands have been analyzed from the total and partial density of states. The complex dielectric function, refractive index, absorption coefficient, reflectivity, and the extinction coefficient are also calculated and analyzed. According to our work, we found that the optical properties of SrZrS3 undergo a red shift with increasing pressure.
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硫系钙钛矿SrZrS3在环境和高压条件下的结构、电子、弹性和光学性质
静水压力是一个有效的工具,可以产生新的晶体结构和物理性质。本文采用基于密度泛函理论(DFT)的第一性原理计算方法,研究了硫系钙钛矿SrZrS3在压力下的结构、电子、弹性和光学性质。结果表明,随着压力的增加,晶格常数和胞体体积均减小,与已有的数值吻合较好。得到的弹性常数表明,SrZrS3在0 ~ 15 GPa范围内力学稳定。此外,从态的总密度和偏密度分析了价带和导带的主要特征。计算并分析了复介电函数、折射率、吸收系数、反射率和消光系数。根据我们的工作,我们发现SrZrS3的光学性质随着压力的增加而发生红移。
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
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