Parametric analysis on DC and analog/linearity response of multi-channel FinFET (Mch-FinFET) with spacer engineering

Abstract

A newly invented structure called Multi-Fin-based FinFET (M-FinFET) device is a promising candidate for future improvisation of the semiconductor industry. In this article, Multi-channel FinFET (M_ch-FinFET) is proposed. A comparative investigation of various DC, analog/linearity attributes is studied for gate length variation and oxide thickness through a Sentaurus TCAD tool. The simulation study concluded that the increased number of channels (= 3no.) has enhanced I_ON by 409.71% compared to single-channel FinFET. The decreased value of Fin width and Fin height has shown an impressive improvement of sub-threshold swing (SS) and leakage current, which helps achieve a better switching ratio. M_ch-FinFET device with lower oxide thickness (T_ox=1 nm) enhances the transconductance (G_m), drain conductance (G_d), intrinsic gain (A_v), and transconductance gain factor (TGF) by 52.42%, 41.17%, 85.03%, respectively. Various linearity parameters like higher-order harmonics (G_m2 and G_m3), voltage intercepts points (VIP2 and VIP3), and 1-dB compression point has improved by 32.32%, 110.71% 77%, 60.09%, 418.86%, 411.5% respectively gate length of 10 nm. Besides that, a symmetric dual spacer material is introduced to the proposed structure to analyze the importance of spacer engineering. The simulation study reveals that the M_ch-FinFET device with HfO₂ spacer has improved driving current by 21.42%. The optimization of various short channel effects (SCEs) such as threshold voltage roll-off, sub-threshold swing (SS), and leakage current is reflected in introducing HfO₂ spacer material. This detailed study is expected to design low-power RF circuits that would benefit future CMOS technology.