Defect structure of high-resistance CdTe:Cl single crystals and MoOx/CdTe:Cl/MoOx heterostructures according to the data of high-resolution X-ray diffractometry
I. Fodchuk, A. Kuzmin, I. Hutsuliak, M. Borcha, V. Kotsyubynsky
{"title":"Defect structure of high-resistance CdTe:Cl single crystals and MoOx/CdTe:Cl/MoOx heterostructures according to the data of high-resolution X-ray diffractometry","authors":"I. Fodchuk, A. Kuzmin, I. Hutsuliak, M. Borcha, V. Kotsyubynsky","doi":"10.15407/spqeo26.04.415","DOIUrl":null,"url":null,"abstract":"Clorine doped CdTe single crystals (CdTe:Cl) were grown by the traveling heater method. MoO x /CdTe:Cl/MoO x films were deposited using the reactive magnetron sputtering technique. The defect structure of the obtained single crystals and heterostructures was investigated using high-resolution X-ray diffractometry. The optimized models of dislocation systems in the CdTe:Cl single crystals were constructed based on the Thompson tetrahedron. The distribution of the intensity of diffracted X-rays as a function of reciprocal space coordinates and rocking curves was analyzed using the kinematic theory of X-ray scattering in real crystals. The experimental and theoretically predicted values of the helical dislocation densities in the CdTe:Cl and MoO x /CdTe:Cl crystals with perfect and mosaic structures were compared. Two-fold increase in the dislocation concentration in the MoO x /CdTe:Cl heterostructures as a result of compression deformations of the CdTe:Cl crystal lattice was found. The ~0.1 μm thick transition deformed layer at the boundary between the MoO x film and CdTe:Cl single crystal significantly affects the electrical and spectroscopic properties of the obtained systems as the materials for γ-radiation detection.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"118 13","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor physics, quantum electronics and optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15407/spqeo26.04.415","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Clorine doped CdTe single crystals (CdTe:Cl) were grown by the traveling heater method. MoO x /CdTe:Cl/MoO x films were deposited using the reactive magnetron sputtering technique. The defect structure of the obtained single crystals and heterostructures was investigated using high-resolution X-ray diffractometry. The optimized models of dislocation systems in the CdTe:Cl single crystals were constructed based on the Thompson tetrahedron. The distribution of the intensity of diffracted X-rays as a function of reciprocal space coordinates and rocking curves was analyzed using the kinematic theory of X-ray scattering in real crystals. The experimental and theoretically predicted values of the helical dislocation densities in the CdTe:Cl and MoO x /CdTe:Cl crystals with perfect and mosaic structures were compared. Two-fold increase in the dislocation concentration in the MoO x /CdTe:Cl heterostructures as a result of compression deformations of the CdTe:Cl crystal lattice was found. The ~0.1 μm thick transition deformed layer at the boundary between the MoO x film and CdTe:Cl single crystal significantly affects the electrical and spectroscopic properties of the obtained systems as the materials for γ-radiation detection.
根据高分辨率 X 射线衍射测量数据确定的高阻 CdTe:Cl 单晶和 MoOx/CdTe:Cl/MoOx 异质结构的缺陷结构
采用行加热法制备了氯掺杂CdTe单晶(CdTe:Cl)。采用反应磁控溅射技术制备了MoO x /CdTe:Cl/MoO x薄膜。利用高分辨率x射线衍射仪研究了所得单晶和异质结构的缺陷结构。基于汤普森四面体构造了CdTe:Cl单晶位错体系的优化模型。利用实际晶体中x射线散射的运动学理论,分析了衍射x射线强度随空间坐标和摇摆曲线的互易分布。比较了CdTe:Cl和MoO x /CdTe:Cl完美晶体和镶嵌晶体中螺旋位错密度的实验值和理论预测值。由于CdTe:Cl晶格的压缩变形,MoO x /CdTe:Cl异质结构中的位错浓度增加了两倍。在MoO x薄膜和CdTe:Cl单晶之间的~0.1 μm厚的过渡变形层显著影响了所获得的系统作为γ辐射探测材料的电学和光谱性能。