A.M. Lukianov, M.G. Dusheiko, V. Lozinskii, V. Temchenko, V. N. Dikusha, N. Klyui
Thermal stability of thin carbon-rich Si carbide films was studied. Air anneals at the temperatures up to 700 °C were used to model the operation thermal conditions of the films in photoelectronic devices such as solar cells covered by Si carbide antireflection coatings. Si carbide films with different carbon-to-silicon ratios were studied. Annealing in air was shown to lead to consecutive film oxidation and transformation from Si carbides to oxidized Si carbide composites. The oxidized composites demonstrated the changes in thickness, element composition and optical properties as compared to the non-annealed films. At this, the films with higher Si content showed better stability of the optical properties at increased temperatures. During annealing, the increase of the film thickness by Si oxide formation competed with the thickness decrease by formation and evaporation of carbon oxide.
研究了富碳碳化硅薄膜的热稳定性。使用温度高达 700 °C 的空气退火来模拟薄膜在光电子器件（如覆盖碳化硅减反射涂层的太阳能电池）中的工作热条件。研究了不同碳硅比的碳化硅薄膜。结果表明，在空气中退火会导致薄膜连续氧化，并从碳化硅转变为氧化碳化硅复合材料。与未退火的薄膜相比，氧化复合材料的厚度、元素组成和光学特性都发生了变化。其中，含硅量较高的薄膜在温度升高时显示出更好的光学特性稳定性。在退火过程中，由于氧化硅的形成而增加的薄膜厚度与由于氧化碳的形成和蒸发而减少的厚度形成了竞争。
{"title":"Effect of annealing in air on the properties of carbon-rich amorphous silicon carbide films","authors":"A.M. Lukianov, M.G. Dusheiko, V. Lozinskii, V. Temchenko, V. N. Dikusha, N. Klyui","doi":"10.15407/spqeo27.01.054","DOIUrl":"https://doi.org/10.15407/spqeo27.01.054","url":null,"abstract":"Thermal stability of thin carbon-rich Si carbide films was studied. Air anneals at the temperatures up to 700 °C were used to model the operation thermal conditions of the films in photoelectronic devices such as solar cells covered by Si carbide antireflection coatings. Si carbide films with different carbon-to-silicon ratios were studied. Annealing in air was shown to lead to consecutive film oxidation and transformation from Si carbides to oxidized Si carbide composites. The oxidized composites demonstrated the changes in thickness, element composition and optical properties as compared to the non-annealed films. At this, the films with higher Si content showed better stability of the optical properties at increased temperatures. During annealing, the increase of the film thickness by Si oxide formation competed with the thickness decrease by formation and evaporation of carbon oxide.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"28 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140248279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Polarization is an important property of light, which refers to the direction of electric field oscillations. Polarization modulation plays an essential role for polarization encoding quantum key distribution (QKD). Polarization is used to encode photons in the QKD systems. In this work, visible-range polarizers with optimal dimensions based on resonance grating waveguides have been numerically designed and investigated using the COMSOL Multiphysics Software. Two structures have been designed, namely a single-layer metasurface grating (SLMG) polarizer and an interlayer metasurface grating (ILMG) polarizer. Both structures have demonstrated high extinction ratios, ~1.8·103 and 8.68·104, and the bandwidths equal to 45 and 55 nm for the SLMG and ILMG, respectively.
{"title":"Numerical study of single-layer and interlayer grating polarizers based on metasurface structures for quantum key distribution systems","authors":"A. Q. Baki, S.K. Tawfeeq","doi":"10.15407/spqeo27.01.109","DOIUrl":"https://doi.org/10.15407/spqeo27.01.109","url":null,"abstract":"Polarization is an important property of light, which refers to the direction of electric field oscillations. Polarization modulation plays an essential role for polarization encoding quantum key distribution (QKD). Polarization is used to encode photons in the QKD systems. In this work, visible-range polarizers with optimal dimensions based on resonance grating waveguides have been numerically designed and investigated using the COMSOL Multiphysics Software. Two structures have been designed, namely a single-layer metasurface grating (SLMG) polarizer and an interlayer metasurface grating (ILMG) polarizer. Both structures have demonstrated high extinction ratios, ~1.8·103 and 8.68·104, and the bandwidths equal to 45 and 55 nm for the SLMG and ILMG, respectively.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"64 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140250073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The mechanisms underlying the origin of fractal shape of inclusions of a new phase in VO2 films during metal-insulator phase transition are discussed. The obtained results show that hysteresis of the temperature dependence of resistance R(T) significantly depends on the film morphology and texture. Moreover, some fractal features are observed. To determine the fractal dimension D of the structural elements of the studied films from their images, different fractal analysis approaches were preliminary compared and discussed. As a result of the film image treatments, the boundaries of the structural elements were found to have fractal dimensions of 1.3 to 1.5 or higher and to correlate with the shape of R(T). The fractal boundaries indicate the dominant role of elastic stress on the phase transition of films, which is confirmed by numerical modeling. Based on these results, an analytical model is proposed that relates the free energy of a film to the fractal dimension of its constituents. Depending on the ratio of the elastic and interface specific energies, the position of the free energy minimum F corresponds to a certain fractal dimensionality D. A small interface energy leads to a higher fractal dimension making the initial phase more stable. This conclusion explains well all the effects observed experimentally in VO2. The obtained results provide a better understanding of the influence of structure and morphology on other properties of the studied films.
{"title":"Study of fractality nature in VO2 films and its influence on metal-insulator phase transition","authors":"A.A. Efremov, B.M. Romaniuk, V.P. Melnyk, O.A. Stadnik, T.M. Sabov, O.A. Kulbachinskiy, O.V. Dubikovskiy","doi":"10.15407/spqeo27.01.028","DOIUrl":"https://doi.org/10.15407/spqeo27.01.028","url":null,"abstract":"The mechanisms underlying the origin of fractal shape of inclusions of a new phase in VO2 films during metal-insulator phase transition are discussed. The obtained results show that hysteresis of the temperature dependence of resistance R(T) significantly depends on the film morphology and texture. Moreover, some fractal features are observed. To determine the fractal dimension D of the structural elements of the studied films from their images, different fractal analysis approaches were preliminary compared and discussed. As a result of the film image treatments, the boundaries of the structural elements were found to have fractal dimensions of 1.3 to 1.5 or higher and to correlate with the shape of R(T). The fractal boundaries indicate the dominant role of elastic stress on the phase transition of films, which is confirmed by numerical modeling. Based on these results, an analytical model is proposed that relates the free energy of a film to the fractal dimension of its constituents. Depending on the ratio of the elastic and interface specific energies, the position of the free energy minimum F corresponds to a certain fractal dimensionality D. A small interface energy leads to a higher fractal dimension making the initial phase more stable. This conclusion explains well all the effects observed experimentally in VO2. The obtained results provide a better understanding of the influence of structure and morphology on other properties of the studied films.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"37 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140250169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Malakhovska, A. Pogodin, M. Filep, R. Mariychuk, M.M. Pop, Ya.I. Studenyak, V.V. Vakulchak, V. Komanicky, S. Vorobiov, M. Sabov
Chitin and its derivatives are common natural polymers that are widely used in various technological fields. In recent years, considerable attention has been paid to the preparation of polymer nanocomposites based on metal nanoparticles (NPs). Chitin/chitosan-based composites due to high antibacterial activity are suitable for application in related food storage, textile industries. This paper presents an effective and simple method of obtaining chitosan-chitin copolymer/Ag nanocomposites with an extremely high content of metal nanoparticles. The structure and morphology of the synthesized nanocomposites were investigated using X-ray diffractometry, Fourier-transform infrared spectroscopy, electron microscopy, and their optical properties were studied using UV-VIS spectroscopy as well as spectral ellipsometry. It was ascertained that the resulting nanocomposite films are characterized by a uniform distribution of spherical silver nanoparticles, the sizes of which increase (from 55 up to 143 nm) with increasing the Ag+-ions concentration in the reaction mixtures. The optical absorption spectra of nanocomposites are characterized by the presence of an absorption maximum within the range 458…525 nm, which confirms the formation of Ag NPs. A monotonous increase in the values of the energies of optical transitions was observed in the process of increasing the average size of NPs
{"title":"Structure and optical characterization of chitosan-chitin/Ag nanocomposite thin films","authors":"T. Malakhovska, A. Pogodin, M. Filep, R. Mariychuk, M.M. Pop, Ya.I. Studenyak, V.V. Vakulchak, V. Komanicky, S. Vorobiov, M. Sabov","doi":"10.15407/spqeo27.01.040","DOIUrl":"https://doi.org/10.15407/spqeo27.01.040","url":null,"abstract":"Chitin and its derivatives are common natural polymers that are widely used in various technological fields. In recent years, considerable attention has been paid to the preparation of polymer nanocomposites based on metal nanoparticles (NPs). Chitin/chitosan-based composites due to high antibacterial activity are suitable for application in related food storage, textile industries. This paper presents an effective and simple method of obtaining chitosan-chitin copolymer/Ag nanocomposites with an extremely high content of metal nanoparticles. The structure and morphology of the synthesized nanocomposites were investigated using X-ray diffractometry, Fourier-transform infrared spectroscopy, electron microscopy, and their optical properties were studied using UV-VIS spectroscopy as well as spectral ellipsometry. It was ascertained that the resulting nanocomposite films are characterized by a uniform distribution of spherical silver nanoparticles, the sizes of which increase (from 55 up to 143 nm) with increasing the Ag+-ions concentration in the reaction mixtures. The optical absorption spectra of nanocomposites are characterized by the presence of an absorption maximum within the range 458…525 nm, which confirms the formation of Ag NPs. A monotonous increase in the values of the energies of optical transitions was observed in the process of increasing the average size of NPs","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"59 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140250348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Relevance of recent research is important for scientists and journals reporting research results. There are many sources of prognoses and one of them is the Report of European Commission "Looking into the R&I future priorities 2025-2027". It predicts the importance of the following areas for users: healthcare, energy, climate, sustainability and digitalization. The Ukrainian journal Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) actually focuses on these areas and contributes to the development of related knowledge. Monitoring of last SPQEO issues shows some interesting results: (i) the effect of local field amplification, which causes emergence of ponder motive forces acting on viruses until destruction of viral envelopes; (ii) the methods of malignant tumors treatment taking into account their genesis mechanisms and focusing on correction of definite pathogenesis components, while being nontoxic for other organs and tissues; and (iii) manipulation of the spectral characteristics of a “polycarbonate matrix – gold nanostructures – HTTH dye” system due to influence of gold nanostructures. SPQEO paid attention to the improvement of solar cells (SCs) by considering physical effects such as the effect of space charge region (SCR) recombination on the key characteristics of high-efficiency silicon solar cells, such as photovoltaic conversion efficiency and open-circuit voltage, is not only dependent on the charge-carrier lifetime in the SCR, but also on the ratio of hole-to-electron-capture cross section, σp/σn. Non- traditional SCs were also considered: SCs with perovskite thin films, SCs comprising CdS/CIGS heterojunctions, and vitamin B12-patterned silicon hybrids based SCs. Moreover, SPQEO also covers research results in the fields of quantum devices, diamond- like and oxide films, and light-emitting diodes.
{"title":"Science in 2025-2027 and the SPQEO journal","authors":"A. Belyaev, P. Smertenko","doi":"10.15407/spqeo27.01.004","DOIUrl":"https://doi.org/10.15407/spqeo27.01.004","url":null,"abstract":"Relevance of recent research is important for scientists and journals reporting research results. There are many sources of prognoses and one of them is the Report of European Commission \"Looking into the R&I future priorities 2025-2027\". It predicts the importance of the following areas for users: healthcare, energy, climate, sustainability and digitalization. The Ukrainian journal Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) actually focuses on these areas and contributes to the development of related knowledge. Monitoring of last SPQEO issues shows some interesting results: (i) the effect of local field amplification, which causes emergence of ponder motive forces acting on viruses until destruction of viral envelopes; (ii) the methods of malignant tumors treatment taking into account their genesis mechanisms and focusing on correction of definite pathogenesis components, while being nontoxic for other organs and tissues; and (iii) manipulation of the spectral characteristics of a “polycarbonate matrix – gold nanostructures – HTTH dye” system due to influence of gold nanostructures. SPQEO paid attention to the improvement of solar cells (SCs) by considering physical effects such as the effect of space charge region (SCR) recombination on the key characteristics of high-efficiency silicon solar cells, such as photovoltaic conversion efficiency and open-circuit voltage, is not only dependent on the charge-carrier lifetime in the SCR, but also on the ratio of hole-to-electron-capture cross section, σp/σn. Non- traditional SCs were also considered: SCs with perovskite thin films, SCs comprising CdS/CIGS heterojunctions, and vitamin B12-patterned silicon hybrids based SCs. Moreover, SPQEO also covers research results in the fields of quantum devices, diamond- like and oxide films, and light-emitting diodes.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"4 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140248861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Microcrystalline diamond films were grown by plasma-enhanced chemical vapor deposition from a CH4/H2 gas mixture on Si single-crystalline substrates placed on negatively charged and grounded substrate holders. The obtained diamond films had the (100) predominant faceting of microcrystals. The film structure and morphology were analyzed by scanning electron microscopy, photoluminescence, Raman and FTIR spectroscopies. The main physical factor causing the difference in the structure of the diamond films grown on the grounded and charged substrate holders was found to be the flow of low-energy (up to 200 eV) Si+, N2+, H, O ions in the latter holder. These ions predominantly embedded into the structure of the diamond films grown on the charged substrate holder leading to appearance of residual mechanical stress up to 2 GPa. Ion bombardment led to increase in the volume fraction of non-diamond carbon component in the film grain boundaries, decrease in sp3-bonded carbon fraction and reduction of the diamond microcrystals lateral size. Larger amount of grain boundaries in the diamond films grown on the charged substrate holder promoted diffusion of Si atoms from the substrate to the plasma and growing film surface, inducing formation of SiV centers in the diamond microcrystals even in the 150…200 μm thick films. The concentration of Si-related defects was much smaller in the films grown using the grounded substrate holder. These films had substantially smaller volume fraction of graphite-like carbon in the grain boundaries and were more homogeneous.
{"title":"Difference in the structure and morphology of CVD diamond films grown on negatively charged and grounded substrate holders: Optical study","authors":"Iu.M. Nasieka, V.E. Strelnitski, O.A. Opalev, V.I. Gritsina, K.I. Koshevyi, O.Ya. Horobei, V.V. Lementaryov, V.I. Trokhaniak, M.I. Boyko","doi":"10.15407/spqeo27.01.079","DOIUrl":"https://doi.org/10.15407/spqeo27.01.079","url":null,"abstract":"Microcrystalline diamond films were grown by plasma-enhanced chemical vapor deposition from a CH4/H2 gas mixture on Si single-crystalline substrates placed on negatively charged and grounded substrate holders. The obtained diamond films had the (100) predominant faceting of microcrystals. The film structure and morphology were analyzed by scanning electron microscopy, photoluminescence, Raman and FTIR spectroscopies. The main physical factor causing the difference in the structure of the diamond films grown on the grounded and charged substrate holders was found to be the flow of low-energy (up to 200 eV) Si+, N2+, H, O ions in the latter holder. These ions predominantly embedded into the structure of the diamond films grown on the charged substrate holder leading to appearance of residual mechanical stress up to 2 GPa. Ion bombardment led to increase in the volume fraction of non-diamond carbon component in the film grain boundaries, decrease in sp3-bonded carbon fraction and reduction of the diamond microcrystals lateral size. Larger amount of grain boundaries in the diamond films grown on the charged substrate holder promoted diffusion of Si atoms from the substrate to the plasma and growing film surface, inducing formation of SiV centers in the diamond microcrystals even in the 150…200 μm thick films. The concentration of Si-related defects was much smaller in the films grown using the grounded substrate holder. These films had substantially smaller volume fraction of graphite-like carbon in the grain boundaries and were more homogeneous.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"8 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140248799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Presented in this paper is an experimental and numerical study of direction-dependent asymmetry of resonant optical characteristics inherent to metal – multilayer-dielectric (MMD) nanostructure, which has much in common with the Tamm plasmonic configuration. We demonstrate that when a MMD structure is illuminated from opposite sides, there is a noticeable asymmetry of the forward/backward reflection resonances, contrasting with the strictly symmetrical transmission resonances indicating classical optical reciprocity. Comparative measurements were carried out on a metal film and a quasi-periodic dielectric structure, which are identical to the corresponding parameters of the MMD structure. Directional asymmetry of reflection and transmission is briefly discussed for a modified MMD structure with the Kerr nonlinearity.
{"title":"Asymmetry of resonant forward/backward reflectivity of metal – multilayer-dielectric nanostructure","authors":"S. G. Ilchenko, V.B. Taranenko","doi":"10.15407/spqeo27.01.090","DOIUrl":"https://doi.org/10.15407/spqeo27.01.090","url":null,"abstract":"Presented in this paper is an experimental and numerical study of direction-dependent asymmetry of resonant optical characteristics inherent to metal – multilayer-dielectric (MMD) nanostructure, which has much in common with the Tamm plasmonic configuration. We demonstrate that when a MMD structure is illuminated from opposite sides, there is a noticeable asymmetry of the forward/backward reflection resonances, contrasting with the strictly symmetrical transmission resonances indicating classical optical reciprocity. Comparative measurements were carried out on a metal film and a quasi-periodic dielectric structure, which are identical to the corresponding parameters of the MMD structure. Directional asymmetry of reflection and transmission is briefly discussed for a modified MMD structure with the Kerr nonlinearity.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"48 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140249068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Korsunska, Yu. O. Polishchuk, I. Markevich, K. Kozoriz, S. Ponomaryov, O. Melnichuk, T. Stara, L. Melnichuk, L. Khomenkova
The structural and electrical characteristics of (Mg,Zn)O ceramics produced using the solid state reaction at 1100 °C for 3 hours were studied applying X-ray diffraction and IR reflection spectroscopy as well as means of direct current measurements versus MgO content in initial charge (varied from 0 to 100 mol.%). It has been shown that electrical conductivity extracted from the IR reflection spectra corresponds to that of hexagonal phase in a solid solution, while plasmon in cubic phase was not observed. The electron concentration in the hexagonal grains of solid solution prepared with MgO content below 30 mol. % in the charge was found to be close to that of ZnO grains. It shows the tendency to decrease with further growth of the MgO content, which was explained by extraction of zinc interstitials, responsible for ZnO conductivity, from ZnO under formation of the MgZnO cubic phase. The direct current measurements have shown the lower conductivity as compared to the value estimated from IR reflection spectra. This fact along with the superlinearity of current-voltage characteristics has been explained by the presence of intergranular barriers, which does not allow obtaining information on the concentration of free electrons in the grain by this method. The possible nature of intergranular barriers as well as the role of grain boundaries in the DC conductivity of samples has been discussed.
利用 X 射线衍射和红外反射光谱，以及直流电测量与初始电荷中氧化镁含量（0 至 100 摩尔/%）的关系，研究了在 1100 °C 下经过 3 小时固态反应生产的（Mg,Zn）O 陶瓷的结构和电气特性。结果表明，从红外反射光谱中提取的导电性与固溶体中六方相的导电性一致，而立方相中的等离子体没有被观察到。在氧化镁含量低于 30 摩尔% 的固溶体中，发现六方晶粒中的电子浓度与氧化锌晶粒中的电子浓度接近。随着氧化镁含量的进一步增加，电子浓度呈下降趋势，这是因为在氧化镁-氧化锌立方相的形成过程中，从氧化锌中提取了导致氧化锌导电性的锌间质。直流测量结果表明，与红外反射光谱估计值相比，导电率更低。这一事实以及电流-电压特性的超线性可以用晶间障的存在来解释，因为这种方法无法获得晶粒中自由电子浓度的信息。我们讨论了晶间障壁的可能性质以及晶界在样品直流导电性中的作用。
{"title":"The dependence of electrical conductivity of MgxZn1–xO ceramics on phase composition","authors":"N. Korsunska, Yu. O. Polishchuk, I. Markevich, K. Kozoriz, S. Ponomaryov, O. Melnichuk, T. Stara, L. Melnichuk, L. Khomenkova","doi":"10.15407/spqeo27.01.070","DOIUrl":"https://doi.org/10.15407/spqeo27.01.070","url":null,"abstract":"The structural and electrical characteristics of (Mg,Zn)O ceramics produced using the solid state reaction at 1100 °C for 3 hours were studied applying X-ray diffraction and IR reflection spectroscopy as well as means of direct current measurements versus MgO content in initial charge (varied from 0 to 100 mol.%). It has been shown that electrical conductivity extracted from the IR reflection spectra corresponds to that of hexagonal phase in a solid solution, while plasmon in cubic phase was not observed. The electron concentration in the hexagonal grains of solid solution prepared with MgO content below 30 mol. % in the charge was found to be close to that of ZnO grains. It shows the tendency to decrease with further growth of the MgO content, which was explained by extraction of zinc interstitials, responsible for ZnO conductivity, from ZnO under formation of the MgZnO cubic phase. The direct current measurements have shown the lower conductivity as compared to the value estimated from IR reflection spectra. This fact along with the superlinearity of current-voltage characteristics has been explained by the presence of intergranular barriers, which does not allow obtaining information on the concentration of free electrons in the grain by this method. The possible nature of intergranular barriers as well as the role of grain boundaries in the DC conductivity of samples has been discussed.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"11 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140249368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Kovanzhi, I.H. Hyrman, V.G. Kravets, O.S. Kondratenko, L. Poperenko
This study examines the optical properties of thin Cu (Ag)-layered structures covered with protective layers based on graphene, titanium (TiO2), or aluminium (Al2O3) oxides. The objective is to investigate the impact of these coatings on the optical behaviors of underlying metallic layers, specifically in the spectral range of excitation of surface plasmon resonances. Combining the methods of spectroreflectometry and spectro-ellipsometry was used to analyze the optical characteristics of the hybrid metal-oxide-graphene films. The study shows that graphene, due to its exceptional electrical conductivity and unique optoelectronic properties, significantly modifies the optical behavior of investigated structures. It includes notable changes in refractive and absorption indices, and optical conductivity indicating potential for enhancing light-matter interactions in plasmonic-graphene layered structures with the aim to apply as biosensor. It is important that addition of TiO2 and Al2O3 layers has also strong effects on the optical properties, which are relevant to their respective applications in the fields of optoelectronics and microelectronics. Employing the effective medium approximation and the Tauc–Lorentz model promotes deeper understanding the interplay between interband and intraband electronic transitions at the nanoscale level. It was revealed that the layer thickness of constituted materials and their individual dielectric functions together with addition of a graphene monolayer commit the significance for altering the optical properties of hybrid layered structures. The obtained results are important for the fields of plasmonics and nanotechnology, providing insights for designing sensors and devices with improved optical characteristics.
{"title":"The conductivity effect of the top coating on optical properties of thin Cu(Ag)-layered structures","authors":"P. Kovanzhi, I.H. Hyrman, V.G. Kravets, O.S. Kondratenko, L. Poperenko","doi":"10.15407/spqeo27.01.095","DOIUrl":"https://doi.org/10.15407/spqeo27.01.095","url":null,"abstract":"This study examines the optical properties of thin Cu (Ag)-layered structures covered with protective layers based on graphene, titanium (TiO2), or aluminium (Al2O3) oxides. The objective is to investigate the impact of these coatings on the optical behaviors of underlying metallic layers, specifically in the spectral range of excitation of surface plasmon resonances. Combining the methods of spectroreflectometry and spectro-ellipsometry was used to analyze the optical characteristics of the hybrid metal-oxide-graphene films. The study shows that graphene, due to its exceptional electrical conductivity and unique optoelectronic properties, significantly modifies the optical behavior of investigated structures. It includes notable changes in refractive and absorption indices, and optical conductivity indicating potential for enhancing light-matter interactions in plasmonic-graphene layered structures with the aim to apply as biosensor. It is important that addition of TiO2 and Al2O3 layers has also strong effects on the optical properties, which are relevant to their respective applications in the fields of optoelectronics and microelectronics. Employing the effective medium approximation and the Tauc–Lorentz model promotes deeper understanding the interplay between interband and intraband electronic transitions at the nanoscale level. It was revealed that the layer thickness of constituted materials and their individual dielectric functions together with addition of a graphene monolayer commit the significance for altering the optical properties of hybrid layered structures. The obtained results are important for the fields of plasmonics and nanotechnology, providing insights for designing sensors and devices with improved optical characteristics.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"60 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140248375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Fedorenko, K.M. Bozhko, N. Kachur, A.V. Kosiakovskiy, V.P. Maslov
This paper is aimed at investigation of electrical properties inherent to zinc oxide (ZnO) nanofilms prepared using the sol-gel method. The experimental samples consisted of a substrate (25×25×1 mm) made of microscopic glass brand “Voles” covered with the above films of the thickness ranging from 50 to 150 nm. Optical characterization was performed to calculate the bandgap width and to confirm the presence of zinc oxide in the nanofilms and demonstrate their optical activity. An oscillographic method was used to measure the surface resistance of nanofilms by using a galvanic elastic contact, which allowed determining their high electrical quality and resistance. Simultaneously, the high mechanical strength of these nanofilms was ascertained under the action of the elastic contact, enduring a series of 5 to 10 measurements without noticeable changes in resistance. Measurements were also carried out to observe the change in the electrical resistance of ZnO films, when they were heated from 25 up to 100 °C. The obtained results have indicated the potential of these nanofilms for applications in the fields of electronics, photoelectronics and sensor technologies.
{"title":"Optical and electrical properties of zinc oxide nanofilms deposited using the sol-gel method","authors":"A. Fedorenko, K.M. Bozhko, N. Kachur, A.V. Kosiakovskiy, V.P. Maslov","doi":"10.15407/spqeo27.01.117","DOIUrl":"https://doi.org/10.15407/spqeo27.01.117","url":null,"abstract":"This paper is aimed at investigation of electrical properties inherent to zinc oxide (ZnO) nanofilms prepared using the sol-gel method. The experimental samples consisted of a substrate (25×25×1 mm) made of microscopic glass brand “Voles” covered with the above films of the thickness ranging from 50 to 150 nm. Optical characterization was performed to calculate the bandgap width and to confirm the presence of zinc oxide in the nanofilms and demonstrate their optical activity. An oscillographic method was used to measure the surface resistance of nanofilms by using a galvanic elastic contact, which allowed determining their high electrical quality and resistance. Simultaneously, the high mechanical strength of these nanofilms was ascertained under the action of the elastic contact, enduring a series of 5 to 10 measurements without noticeable changes in resistance. Measurements were also carried out to observe the change in the electrical resistance of ZnO films, when they were heated from 25 up to 100 °C. The obtained results have indicated the potential of these nanofilms for applications in the fields of electronics, photoelectronics and sensor technologies.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"50 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140250289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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