San-Dong Guo, Yu-Ling Tao, Zi-Yang Zhuo, Gangqiang Zhu, Yee Sin Ang
{"title":"Electric-filed tuned anomalous valley Hall effect in A-type hexagonal antiferromagnetic monolayer","authors":"San-Dong Guo, Yu-Ling Tao, Zi-Yang Zhuo, Gangqiang Zhu, Yee Sin Ang","doi":"arxiv-2312.07202","DOIUrl":null,"url":null,"abstract":"The combination of antiferromagnetic (AFM) spintronics and anomalous valley\nHall effect (AVHE) is of great significance for potential applications in\nvalleytronics. Here, we propose a design principle for achieving AVHE in A-type\nhexagonal AFM monolayer. The design principle involves the introduction of\nlayer-dependent electrostatic potential caused by out-of-plane external\nelectric field, which can break the combined symmetry ($PT$ symmetry) of\nspatial inversion ($P$) and time reversal ($T$), producing spin splitting. The\nspin order of spin splitting can be reversed by regulating the direction of\nelectric field. Based on first-principles calculations, the design principle\ncan be verified in AFM $\\mathrm{Cr_2CH_2}$. The layer-locked hidden Berry\ncurvature can give rise to layer-Hall effect, including valley layer-spin Hall\neffect and layer-locked AVHE. Our works provide an experimentally feasible way\nto realize AVHE in AFM monolayer.","PeriodicalId":501234,"journal":{"name":"arXiv - PHYS - Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2312.07202","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The combination of antiferromagnetic (AFM) spintronics and anomalous valley
Hall effect (AVHE) is of great significance for potential applications in
valleytronics. Here, we propose a design principle for achieving AVHE in A-type
hexagonal AFM monolayer. The design principle involves the introduction of
layer-dependent electrostatic potential caused by out-of-plane external
electric field, which can break the combined symmetry ($PT$ symmetry) of
spatial inversion ($P$) and time reversal ($T$), producing spin splitting. The
spin order of spin splitting can be reversed by regulating the direction of
electric field. Based on first-principles calculations, the design principle
can be verified in AFM $\mathrm{Cr_2CH_2}$. The layer-locked hidden Berry
curvature can give rise to layer-Hall effect, including valley layer-spin Hall
effect and layer-locked AVHE. Our works provide an experimentally feasible way
to realize AVHE in AFM monolayer.