SPICE model of MoS2/p-Si photodiode

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2023-12-14 DOI:10.1016/j.sse.2023.108848

Feng Li, Shubin Zhang, Yanfeng Jiang

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引用次数: 0

Abstract

Molybdenum disulfide (MoS₂) 2D-material is considered as one of potential candidates for next generation optoelectronic devices due to its tunable bandgap, relatively high carrier mobility, and good light absorption, etc. From the perspective of circuit simulation and system verification, an equivalent circuit model of MoS₂/p-Si photodiode is required. In the paper, the optical response and the carrier transmission process of MoS₂/p-Si photodiode are analyzed theoretically. A SPICE (Simulation Program with Integrated Circuit Emphasis) equivalent circuit model of MoS₂/p-Si photodiode is proposed, which can be used to simulate the photoelectric characteristics of the 2D device. Based on the established SPICE model of MoS₂/p-Si photodiode, the simulation results are consistent with the experimental results of MoS₂/p-Si photodiode devices. The trans-impedance amplifier (TIA) is designed for MoS₂/p-Si photodiode, and the set-up SPICE model is used to verify the designed TIA circuit. It shows that the SPICE model has potential application for the simulation of the opto-electrical system including the cutting-edge 2-D photo diode.

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MoS2/p-Si 光电二极管的 SPICE 模型

二硫化钼（MoS2）二维材料因其可调带隙、相对较高的载流子迁移率和良好的光吸收等特性，被认为是下一代光电器件的潜在候选材料之一。从电路仿真和系统验证的角度来看，需要建立 MoS2/p-Si 光电二极管的等效电路模型。本文从理论上分析了 MoS2/p-Si 光电二极管的光学响应和载流子传输过程。提出了 MoS2/p-Si 光电二极管的 SPICE（集成电路仿真程序）等效电路模型，可用于模拟二维器件的光电特性。基于已建立的 MoS2/p-Si 光电二极管 SPICE 模型，仿真结果与 MoS2/p-Si 光电二极管器件的实验结果一致。针对 MoS2/p-Si 光电二极管设计了跨阻抗放大器（TIA），并利用建立的 SPICE 模型验证了所设计的 TIA 电路。结果表明，SPICE 模型在模拟包括尖端二维光电二极管在内的光电系统方面具有潜在的应用价值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.