{"title":"Performance comparison of planar and cylindrical ferroelectric tunnel junctions","authors":"yirong Guo, Jie Li, Pengying Chang","doi":"10.35848/1347-4065/ad184e","DOIUrl":null,"url":null,"abstract":"\n A comprehensive comparison of the electrical characteristics between the planar (P-FTJ) and cylindrical ferroelectric tunnel junction (C-FTJ) is conducted based on physical modeling and simulation. The FTJ architecture is consisted of metal-ferroelectric-dielectric-metal stacks. Two configurations of C-FTJ are considered depending on whether the position of ferroelectric layer is close or away from the inner electrode. The differences between the P-FTJ and C-FTJs in the distributions of the electric field and ferroelectric polarization are analyzed. The resultant tunneling electroresistance (TER) are explored as a function of the inner radius, ferroelectric thickness, dielectric thickness, and remnant polarization. These simulation results offer physical insights into achieving highly integrated three-dimensional storage structures through improving the TER ratio.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"9 29","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2023-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad184e","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
A comprehensive comparison of the electrical characteristics between the planar (P-FTJ) and cylindrical ferroelectric tunnel junction (C-FTJ) is conducted based on physical modeling and simulation. The FTJ architecture is consisted of metal-ferroelectric-dielectric-metal stacks. Two configurations of C-FTJ are considered depending on whether the position of ferroelectric layer is close or away from the inner electrode. The differences between the P-FTJ and C-FTJs in the distributions of the electric field and ferroelectric polarization are analyzed. The resultant tunneling electroresistance (TER) are explored as a function of the inner radius, ferroelectric thickness, dielectric thickness, and remnant polarization. These simulation results offer physical insights into achieving highly integrated three-dimensional storage structures through improving the TER ratio.
期刊介绍：
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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