{"title":"The Role of Alanine in the Chemical Mechanical Polishing of Aluminum","authors":"Yuwei Cao, Sheng-li Wang, Chong Luo, chenwei wang, Yuhang Qi, Xianwen Yan, Qiang Wang, Yundian Yang","doi":"10.1149/2162-8777/ad161b","DOIUrl":null,"url":null,"abstract":"\n With the evolution of integrated circuits, the transition from polycrystalline silicon to aluminum as the gate electrode has become prevalent due to its inherent advantages. This study delves into the impact of pH and alanine on the aluminum removal rate and surface roughness during chemical mechanical polishing (CMP) using colloidal silica as the abrasive. Alanine is incorporated as a complexing agent in the polishing slurry under acidic environment. The mechanistic role of alanine in the aluminum CMP process was explored using techniques such as electrochemical tests, scanning electron microscope, X-ray photoelectron spectroscopy, and UV–visible spectroscopy. Furthermore, density functional theory calculations were employed to investigate the quantum chemical parameters of alanine and further explore its complexation mechanism. The experimental results indicate that at an alanine concentration of 1.5 wt%, the Al removal rate reaches 2124.07 Å min-1 with a surface roughness is 1.33 nm. The interaction between alanine and aluminum ions (Al3+) yields soluble Al-alanine complexes, which facilitate the corrosive process on the surface of Al and enhance its removal rate.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8000,"publicationDate":"2023-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Journal of Solid State Science and Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1149/2162-8777/ad161b","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
With the evolution of integrated circuits, the transition from polycrystalline silicon to aluminum as the gate electrode has become prevalent due to its inherent advantages. This study delves into the impact of pH and alanine on the aluminum removal rate and surface roughness during chemical mechanical polishing (CMP) using colloidal silica as the abrasive. Alanine is incorporated as a complexing agent in the polishing slurry under acidic environment. The mechanistic role of alanine in the aluminum CMP process was explored using techniques such as electrochemical tests, scanning electron microscope, X-ray photoelectron spectroscopy, and UV–visible spectroscopy. Furthermore, density functional theory calculations were employed to investigate the quantum chemical parameters of alanine and further explore its complexation mechanism. The experimental results indicate that at an alanine concentration of 1.5 wt%, the Al removal rate reaches 2124.07 Å min-1 with a surface roughness is 1.33 nm. The interaction between alanine and aluminum ions (Al3+) yields soluble Al-alanine complexes, which facilitate the corrosive process on the surface of Al and enhance its removal rate.
期刊介绍:
The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.
JSS has five topical interest areas:
carbon nanostructures and devices
dielectric science and materials
electronic materials and processing
electronic and photonic devices and systems
luminescence and display materials, devices and processing.