Au-free V/Al/Pt Contacts on n-Al0.85Ga0.15N:Si Surfaces of Far-UVC LEDs

IF 1.8 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY ECS Journal of Solid State Science and Technology Pub Date : 2024-09-18 DOI:10.1149/2162-8777/ad78ff

Hyun Kyong Cho, Ina Ostermay, Tim Kolbe, Jens Rass and Sven Einfeldt

引用次数: 0

Abstract

The feasibility of replacing the V/Al/Ni/Au contact on n-Al0.85Ga0.15N:Si commonly used in far-UVC LEDs with a Au-free V/Al/Pt contact has been investigated. It is shown that the V and Pt layer thicknesses play an important role for achieving a low contact resistivity and a smooth contact surface at a low annealing temperature. The specific contact resistivity of V(10 nm)/Al(120 nm)/Pt(40 nm) annealed at 700 °C for 5 min is comparable with that of V(15 nm)/Al(120 nm)/Ni(20 nm)/Au(30 nm) annealed at 850 °C for 30 s. Furthermore, the root mean square roughness of the optimized V/Al/Pt contacts was 8.3 nm as compared to 30 nm for V/Al/Ni/Au.

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远紫外 LED 的 n-Al0.85Ga0.15N:Si 表面上的无金 V/Al/Pt 触点

研究了用无金 V/Al/Pt 触点取代远紫外 LED 中常用的 n-Al0.85Ga0.15N:Si 上的 V/Al/Ni/Au 触点的可行性。结果表明，V 层和 Pt 层的厚度对于在低退火温度下实现低接触电阻率和光滑接触表面起着重要作用。在 700 °C 下退火 5 分钟的 V(10 nm)/Al(120 nm)/Pt(40 nm) 接触电阻率与在 850 °C 下退火 30 秒的 V(15 nm)/Al(120 nm)/Ni(20 nm)/Au(30 nm) 接触电阻率相当。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

ECS Journal of Solid State Science and Technology MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

4.50

自引率

13.60%

发文量

455

期刊介绍： The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices. JSS has five topical interest areas: carbon nanostructures and devices dielectric science and materials electronic materials and processing electronic and photonic devices and systems luminescence and display materials, devices and processing.