Quantum cascade lasers grown by MOCVD

IF 4.8 4区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Journal of Semiconductors Pub Date : 2023-12-01 DOI:10.1088/1674-4926/44/12/121901

Yongqiang Sun, Guangzhou Cui, K. Guo, Jinchuan Zhang, N. Zhuo, Lijun Wang, Shuman Liu, Zhiwei Jia, Teng Fei, Kun Li, Jun-qi Liu, Feng-qi Liu, S. Zhai

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Abstract

Sharing the advantages of high optical power, high efficiency and design flexibility in a compact size, quantum cascade lasers (QCLs) are excellent mid-to-far infrared laser sources for gas sensing, infrared spectroscopic, medical diagnosis, and defense applications. Metalorganic chemical vapor deposition (MOCVD) is an important technology for growing high quality semiconductor materials, and has achieved great success in the semiconductor industry due to its advantages of high efficiency, short maintenance cycles, and high stability and repeatability. The utilization of MOCVD for the growth of QCL materials holds a significant meaning for promoting the large batch production and industrial application of QCL devices. This review summarizes the recent progress of QCLs grown by MOCVD. Material quality and the structure design together determine the device performance. Research progress on the performance improvement of MOCVD-grown QCLs based on the optimization of material quality and active region structure are mainly reviewed.

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通过 MOCVD 生长的量子级联激光器

量子级联激光器（QCL）具有光功率大、效率高、设计灵活、体积小等优点，是气体传感、红外光谱、医疗诊断和国防应用领域的理想中远红外激光光源。金属有机化学气相沉积（MOCVD）是生长高质量半导体材料的一项重要技术，因其具有效率高、维护周期短、稳定性和可重复性高等优点，在半导体行业取得了巨大成功。利用 MOCVD 生长 QCL 材料对促进 QCL 器件的大批量生产和工业应用具有重要意义。本综述总结了 MOCVD 生长 QCL 的最新进展。材料质量和结构设计共同决定了器件的性能。主要综述了基于材料质量和有源区结构优化的 MOCVD 生长 QCL 性能改进的研究进展。

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