Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Journal of Semiconductors Pub Date : 2024-09-01 DOI:10.1088/1674-4926/24020017
Lu Wang, Xulei Qin, Li Zhang, Kun Xu, Feng Yang, Shaoqian Lu, Yifei Li, Bosen Liu, Guohao Yu, Zhongming Zeng, Baoshun Zhang
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Abstract

In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly improved due to the catalytic effect of trimethyl-gallium (TMGa), but AlN crystal structure and composition are not affected. When the proportion of TMGa in gas phase was low, crystal quality of AlN can be improved and three-dimensional growth mode of AlN was enhanced with the increase of Ga source. When the proportion of TMGa in gas phase was high, two-dimensional growth mode of AlN was presented, with the increase of Ga source results in the deterioration of AlN crystal quality. Finally, employing a two-step growth approach, involving the initial growth of Ga-free AlN nucleation layer followed by Ga-assisted AlN growth, high quality of AlN film with flat surface was obtained and the full width at half maximum (FWHM) values of 415 nm AlN (002) and (102) planes were 465 and 597 arcsec.
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微波等离子体化学气相沉积法中镓表面活性剂对氮化铝薄膜的影响
在这项研究中,我们使用镓(Ga)作为表面活性剂,通过微波等离子体化学气相沉积(MPCVD)技术在偏轴 4° 的 4H-SiC 基底上生长了 AlN 薄膜。我们发现,由于三甲基镓(TMGa)的催化作用,AlN 的生长速度可以大大提高,但 AlN 的晶体结构和组成却不受影响。当气相中 TMGa 的比例较低时,AlN 的晶体质量可以得到改善,AlN 的三维生长模式随着 Ga 源的增加而增强。当气相中 TMGa 的比例较高时,AlN 呈现二维生长模式,随着镓源的增加,AlN 晶体质量下降。最后,采用两步生长法,即先生长无 Ga 的 AlN 成核层,然后再生长有 Ga 辅助的 AlN,获得了表面平坦的高质量 AlN 薄膜,415 nm AlN (002) 和 (102) 平面的半最大全宽(FWHM)值分别为 465 和 597 弧秒。
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
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