Improvement of radiation resistance of GaInP/GaInAs/Ge triple-junction solar cell with GaInAs/GaAsP quantum wells

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED Japanese Journal of Applied Physics Pub Date : 2023-12-21 DOI:10.35848/1347-4065/ad0cda

Wenyi Yang, Xiaobin Zhang, Zimin Chen, Lin Zhu, Xuezhen Liu, Jianqing Liu, Gang Wang

{"title":"Improvement of radiation resistance of GaInP/GaInAs/Ge triple-junction solar cell with GaInAs/GaAsP quantum wells","authors":"Wenyi Yang, Xiaobin Zhang, Zimin Chen, Lin Zhu, Xuezhen Liu, Jianqing Liu, Gang Wang","doi":"10.35848/1347-4065/ad0cda","DOIUrl":null,"url":null,"abstract":"Introducing quantum wells (QWs) into a GaAs solar cell can expand its spectral response range to raise the short-circuit current (<italic toggle=\"yes\">J</italic>\nsc). GaInP/GaInAs/Ge triple-junction (TJ) solar cells with strain-balanced InGaAs/GaAsP QWs in a GaInAs cell have been fabricated and irradiated by 1 MeV electron fluences. The AM0 efficiency of the TJ cell increases from 30% to 32% by inserting 30 period QWs. Under the electron irradiation condition of 1 MeV, 1 × 1015 cm−2, the radiation resistance of quantum well solar cells (QWSCs) is worse than that of the reference cell without QWs. The effect of QW doping on the radiation resistance of the 30 QWSC has been studied. After irradiation, the radiation resistance of <italic toggle=\"yes\">J</italic>\nsc is improved by the unintentional doping of QWs, resulting in lower degradation of efficiency. An efficiency of 26.30% after irradiation is attained and this indicates that the QWSC has expectable potential to be applied to satellites.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"18 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2023-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad0cda","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

Introducing quantum wells (QWs) into a GaAs solar cell can expand its spectral response range to raise the short-circuit current (J _sc). GaInP/GaInAs/Ge triple-junction (TJ) solar cells with strain-balanced InGaAs/GaAsP QWs in a GaInAs cell have been fabricated and irradiated by 1 MeV electron fluences. The AM0 efficiency of the TJ cell increases from 30% to 32% by inserting 30 period QWs. Under the electron irradiation condition of 1 MeV, 1 × 10¹⁵cm⁻², the radiation resistance of quantum well solar cells (QWSCs) is worse than that of the reference cell without QWs. The effect of QW doping on the radiation resistance of the 30 QWSC has been studied. After irradiation, the radiation resistance of J _sc is improved by the unintentional doping of QWs, resulting in lower degradation of efficiency. An efficiency of 26.30% after irradiation is attained and this indicates that the QWSC has expectable potential to be applied to satellites.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

利用 GaInAs/GaAsP 量子阱改善 GaInP/GaInAs/Ge 三结太阳能电池的抗辐射性能

在砷化镓太阳能电池中引入量子阱 (QW) 可以扩大其光谱响应范围，从而提高短路电流 (Jsc)。在 GaInAs 电池中加入应变平衡 InGaAs/GaAsP QW 的 GaInP/GaInAs/Ge 三重结 (TJ) 太阳能电池已经制作完成，并通过 1 MeV 电子流进行了辐照。通过插入 30 个周期的 QW，TJ 电池的 AM0 效率从 30% 提高到 32%。在 1 MeV、1 × 1015 cm-2 的电子辐照条件下，量子阱太阳能电池（QWSCs）的抗辐射能力比不含 QWs 的参考电池差。我们研究了 QW 掺杂对 30 QWSC 辐射电阻的影响。辐照后，由于无意中掺杂了 QWs，Jsc 的辐射电阻得到了改善，从而降低了效率。辐照后的效率达到了 26.30%，这表明 QWSC 具有应用于卫星的预期潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS