Turn-off switching voltage surge analysis with dependence on IGBT cell design

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED Japanese Journal of Applied Physics Pub Date : 2024-01-04 DOI:10.35848/1347-4065/ad106d

Yuri Fujimoto, Shin-ichi Nishizawa, Wataru Saito

{"title":"Turn-off switching voltage surge analysis with dependence on IGBT cell design","authors":"Yuri Fujimoto, Shin-ichi Nishizawa, Wataru Saito","doi":"10.35848/1347-4065/ad106d","DOIUrl":null,"url":null,"abstract":"Surge voltage at insulated gate bipolar transistor turn-off switching was analyzed with dependence on cell design parameters. Although drift layer thinning is effective in improving trade-off characteristics between turn-off loss <italic toggle=\"yes\">E</italic>\noff and on-state voltage <italic toggle=\"yes\">V</italic>\non, voltage surge is induced due to the quickly expanding depletion layer. Therefore, the surge voltage <italic toggle=\"yes\">V</italic>\nsurge has also a trade-off relationship with <italic toggle=\"yes\">V</italic>\non at the same <italic toggle=\"yes\">E</italic>\noff condition. The origin of the voltage surge was analyzed using TCAD simulation, and the total amount of remaining holes in the drift layer during turn-off switching is a key factor for the <italic toggle=\"yes\">V</italic>\nsurge. A narrow mesa structure and thick buffer layer are effective for the improvement of trade-off characteristics between <italic toggle=\"yes\">V</italic>\nsurge and <italic toggle=\"yes\">V</italic>\non. However, the optimum buffer layer thickness depends on the voltage-class due to the speed for punch through.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"27 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad106d","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

Surge voltage at insulated gate bipolar transistor turn-off switching was analyzed with dependence on cell design parameters. Although drift layer thinning is effective in improving trade-off characteristics between turn-off loss E _off and on-state voltage V _on, voltage surge is induced due to the quickly expanding depletion layer. Therefore, the surge voltage V _surge has also a trade-off relationship with V _on at the same E _off condition. The origin of the voltage surge was analyzed using TCAD simulation, and the total amount of remaining holes in the drift layer during turn-off switching is a key factor for the V _surge. A narrow mesa structure and thick buffer layer are effective for the improvement of trade-off characteristics between V _surge and V _on. However, the optimum buffer layer thickness depends on the voltage-class due to the speed for punch through.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

关断开关电压浪涌分析与 IGBT 单元设计有关

分析了绝缘栅双极晶体管关断开关时的浪涌电压与电池设计参数的关系。虽然漂移层减薄能有效改善关断损耗 Eoff 和导通电压 Von 之间的权衡特性，但由于耗尽层迅速膨胀，会引起电压浪涌。因此，在相同的关断损耗条件下，浪涌电压 Vsurge 也与 Von 存在权衡关系。利用 TCAD 仿真分析了电压浪涌的起源，发现关断开关时漂移层中剩余孔的总量是影响 Vsurge 的关键因素。窄网格结构和厚缓冲层可有效改善 Vsurge 和 Von 之间的权衡特性。不过，最佳缓冲层厚度取决于电压等级，这是由击穿速度决定的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS