Cobalt sulfide films by sulfurizing cobalt for resistive switching memory

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED Japanese Journal of Applied Physics Pub Date : 2023-12-29 DOI:10.35848/1347-4065/ad0cde

Shyankay Jou, Muhammad Hawary Assa, Bohr-Ran Huang, Xin-Wei Huang

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Abstract

A cobalt sulfide (CoS_x) film compromising CoS₂ and Co₉S₈ nanograins was formed by sulfurizing the surface of a Co film to use for resistive switching (RS) memory. The work function and band gap of the CoS_x film were measured to be 4.78 eV and 2.18 eV, respectively. The CoS_x film was used as a resistive layer together with the Co film underneath as a bottom electrode, and a Ag or Cu film as the top electrode. Both Ag/CoS_x/Co and Cu/CoS_x/Co devices exhibited bipolar RS behavior with the capability of multi-level memory storage. The conduction of both devices in low resistive states was correlated with metallic filamentary paths following ohmic conduction, whereas Schottky emission originated at the Ag/CoS_x and Cu/CoS_x interfaces dominated in the high resistance state. The performance of Ag/CoS_x/Co and Cu/CoS_x/Co devices were compared and correlated with the properties of Ag and Cu electrodes.

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用于电阻式开关存储器的硫化钴薄膜

通过对用于电阻开关（RS）存储器的钴薄膜表面进行硫化，形成了由 CoS2 和 Co9S8 纳米晶粒组成的硫化钴（CoSx）薄膜。经测量，CoSx 薄膜的功函数和带隙分别为 4.78 eV 和 2.18 eV。CoSx 薄膜用作电阻层，下面的 Co 薄膜用作底电极，Ag 或 Cu 薄膜用作顶电极。Ag/CoSx/Co 和 Cu/CoSx/Co 器件都表现出双极 RS 行为，具有多级存储能力。这两种器件在低电阻状态下的传导与欧姆传导后的金属丝路径有关，而在高电阻状态下，源自 Ag/CoSx 和 Cu/CoSx 接口的肖特基发射占主导地位。对 Ag/CoSx/Co 和 Cu/CoSx/Co 器件的性能进行了比较，并将其与 Ag 和 Cu 电极的特性联系起来。

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS